Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
J CRYST GROWTH 170:1-4 (1997) 132-138
Abstract:
A correlation between substrate dopant type and the absorption spectra of MQW structures has been identified. Optical absorption spectra from MQW structures grown on S-doped InP can show poorly resolved excitonic features with respect to those obtained from structures grown on both Sn- and Fe-doped substrates. It is proposed that this degradation is due to enhanced interfacial diffusion on the Group V sublattice for structures grown on substrates incorporating low defect densities.Detection of intersubband transitions in gallium arsenide coupled quantum wells by hot electron effects
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 204:1 (1997) 166-169
Formation of type-II excitons in CdTe/Cd1-xMnxTe superlattices at high magnetic fields
PHYSICAL REVIEW B 56:16 (1997) 10453-10458
Fractional quantum Hall effect measurements at zero g factor
PHYSICAL REVIEW LETTERS 79:21 (1997) 4246-4249
Minigaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices
PHYSICAL REVIEW LETTERS 79:16 (1997) 3034-3037