Xinyu Shen

Abstract:

Abstract Controlling the transport and minimizing charge carrier trapping at interfaces is crucial for the performance of various optoelectronic devices. Here, how electronic properties of stable, abundant, and easy‐to‐synthesized carbon dots (CDs) are controlled via the surface chemistry through a chosen ratio of their precursors citric acid and ethylenediamine are demonstrated. This allows to adjust the work function of indium tin oxide (ITO) films over the broad range of 1.57 eV, through deposition of thin CD layers. CD modifiers with abundant amine groups reduce the ITO work function from 4.64 to 3.42 eV, while those with abundant carboxyl groups increase it to 4.99 eV. Using CDs to modify interfaces between metal oxide (SnO 2 and ZnO) films and active layers of solar cells and light‐emitting diodes (LEDs) allows to significantly improve their performance. Power conversion efficiency of CH 3 NH 3 PbI 3 perovskite solar cells increases from 17.3% to 19.5%; the external quantum efficiency of CsPbI 3 perovskite quantum dot LEDs increases from 4.8% to 10.3%; and that of CdSe/ZnS quantum dot LEDs increases from 8.1% to 21.9%. As CD films are easily fabricated in air by solution processing, the approach paves the way to a simplified manufacturing of large‐area and low‐cost optoelectronic devices.

Abstract:

Charge extraction by electron transport layers (ETLs) plays a vital role in improving the performance of perovskite solar cells (PSCs). Here, PSCs with four different types of ETLs, such as SnO2, amorphous‐Zn2SnO4 (am‐ZTO), am‐ZTO/SnO2, and SnO2/am‐ZTO, are successfully synthesized. The interface recombination behavior and the charge transport properties of the devices affected by four types of ETLs are systematically investigated. For dual am‐ZTO/SnO2 ETLs, compact am‐ZTO ETL prepared by the pulsed laser deposition method provides a dense physical contact with FTO than the spin coating films, decreasing leakage current and improving charge collection at the interface of ETL/FTO. Moreover, dual am‐ZTO/SnO2 ETLs lead to large free energy difference (ΔG), improving electron injection from perovskite to ETLs. One additional electron pathway from perovskite to am‐ZTO is formed, which can also improve electron injection efficiency. A power conversion efficiency of 20.04% and a stabilized efficiency of 19.17% are achieved for the device based on dual am‐ZTO/SnO2 ETLs. Most importantly, the devices are fabricated at a low temperature of 150 °C, which offers a potential method for large‐scale production of PSCs, and paves the way for the development of flexible PSCs. It is believed that this work provides a strategy to design ETLs via controlling ΔG and interface contact to improve the performance of PSCs.

Abstract:

With the development of the display technology, there are higher requirements for color saturation and vividness. As a base unit, light-emitting diode (LED) has become a primary object of study. Perovskite quantum dots with high photoluminescence quantum yield, narrow emission, and wide color gamut have attracted special attention in recent years. Although LEDs based on perovskite exhibit excellent performance, there are few applications of perovskite LEDs in display. Herein, LEDs based on CsPbI3 perovskite were used as basic units for fabricating eight-segment LED displays. The LEDs exhibited a luminance of 780 cd/m2 and an external quantum efficiency of 6%. The current-density and luminance vs driving voltage confirms the uniformity of these LEDs in the eight segments, which will promote the application of perovskite nanocrystalline LEDs in the field of full color display.

Abstract:

Perovskite white light-emitting devices (WLEDs) without intercalation layers have not been achieved due to the ion exchange. Although the intercalation layers prevent ion exchange between perovskite nanocrystals (NCs), it also creates a new problem of charge imbalance and the structure becomes more complex. In this study, blue emitting ZnCdS/ZnS NCs with high quantum yield and stability are introduced to work with the yellow emission from CsPb(Br/I)₃ perovskite NCs for WLEDs. The WLEDs are constituted of ITO/ZnO/PEI/ZnCdS/ZnS NCs/CsPb(Br/I)₃ NCs/TCTA/MoO₃/Au. This design avoids ion exchange between different perovskites NCs, and realizes white light emission by simple fabrication. As a result, we achieved the white light coordinates of (0.34, 0.34) and a correlated color temperature of 5153 K.

Abstract:

All-inorganic cesium lead halide perovskite nanocrystals (NCs) have demonstrated excellent optical properties and an encouraging potential for optoelectronic applications; however, mixed-halide perovskites, especially CsPb(Cl/Br)₃ NCs, still show lower photoluminescence quantum yields (PL QY) than the corresponding single-halide materials. Herein, anhydrous oxalic acid is used to post-treat CsPb(Cl/Br)₃ NCs in order to initially remove surface defects and halide vacancies, and thus, to improve their PL QY from 11% to 89% for the emission of 451 nm. Furthermore, due to the continuous chelating reaction with the oxalate ion, chloride anions from the mixed-halide CsPb(Cl/Br)₃ perovskite NCs could be extracted, and green emitting CsPbBr₃ NCs with PL QY of 85% at 511 nm emission are obtained. Besides being useful to improve the emission of CsPb(Cl/Br)₃ NCs, the oxalic acid treatment strategy introduced here provides a further tool to adjust the distribution of halide anions in mixed-halide perovskites without using any halide additives.