Optical switching in v O2 films by below-gap excitation
Applied Physics Letters 92:18 (2008)
Abstract:
We study the photoinduced insulator-metal transition in V O2, correlating its threshold and dynamics with excitation wavelength. In single crystals, switching can only be induced with photon energies above the 670 meV gap. This contrasts with the case of polycrystalline films, where formation of the metallic state can be initiated also with photon energies as low as 180 meV, which are well below the bandgap. Perfection of this process may become conducive to schemes for optical switches, limiters, and detectors operating at room temperature in the mid-infrared. © 2008 American Institute of Physics.Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide (vol 99, art no 226401, 2007)
PHYSICAL REVIEW LETTERS 100:1 (2008) ARTN 019906
Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide.
Phys Rev Lett 99:22 (2007) 226401
Abstract:
We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching Tc a reduction in the fluence required to drive the IM transition is observed, consistent with a softening of the insulating state due to an increasing metallic volume fraction (below the percolation limit). This phase coexistence facilitates the growth of a homogeneous metallic conducting phase following superheating via photoexcitation. A simple dynamic model using Bruggeman effective medium theory describes the observed initial condition sensitivity.Chemistry. All at once.
Science 318:5851 (2007) 755-756
Control of the electronic phase of a manganite by mode-selective vibrational excitation.
Nature 449:7158 (2007) 72-74