Time-resolved dynamics in single InGaN quantum dots
Proceedings of SPIE the International Society for Optical Engineering 5725 (2005) 296-308
Abstract:
We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-dimensional wetting layer. The lifetimes of single dots in the temperature range 4 K to 60 K decrease with increasing temperature. Microphotoluminescence measurements of exciton complexes in single MOVPE-grown InGaN quantum dots are also reported. We find the exciton-biexciton and exciton-charged exciton splitting energies to be 25 meV and 10 meV to the higher-energy side of the exciton ground state, respectively. Assignments of the ground state exciton, biexciton and charged exciton are supported by theoretical calculations. These measurements have been extended to investigate the time-resolved dynamics of biexciton transitions in the quantum dots. The measurements yield a radiative recombination lifetime of 1.0 ns for the exciton and 1.4 ns for the biexciton. The data can be fitted to a coupled differential equation rate equation model, confirming that the exciton state is refilled as biexcitons undergo radiative decay.Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
Aip Conference Proceedings 772 (2005) 865-866
Abstract:
InTheoretical and experimental investigation of biexcitons and charged excitons in InGaN single quantum dots
Aip Conference Proceedings 772 (2005) 695-696
Abstract:
Micro-photoluminescence measurements on single InGaN quantum dots at 4K exhibit a rich structure of lines to the high-energy side of the free exciton (X0), as a function of excitation density. Lines possibly attributable to biexcitons (2X0) and charged excitons (X+ and X-) have been measured. We model the dots as truncated cone shapes, using a self-consistent finite difference method in the Hartree approximation to compute the ground-state wavefunctions of the four exciton complexes. We calculate the exciton recombination energy (X0) and the magnitude of the blue-shifts of the biexciton and charged excitons as a function of dot size and composition. The transition energy depends strongly on both dot composition and dot height, while the magnitude of the blue shift is determined primarily by the piezoelectric field-induced separation of electrons and holes. We use these two separate effects to place constraints on allowed models for the QDs. The experimentally measured energies are in agreement with these theoretical calculations. © 2005 American Institute of Physics.Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
Applied Physics Letters 86:21 (2005) 1-3
Abstract:
The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field. © 2005 American Institute of Physics.Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
Applied Physics Letters 86:12 (2005) 1-3