Quantum Optoelectronics

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Time-resolved photoluminescence from hot two-dimensional carriers in GaAs-GaAlAs MQWS

Surface Science Letters Elsevier 170:1-2 (1986) a248

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock
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TIME-RESOLVED PHOTOLUMINESCENCE FROM HOT TWO-DIMENSIONAL CARRIERS IN GAAS-GAALAS MQWS

SURFACE SCIENCE 170:1-2 (1986) 511-519

Authors:

JF RYAN, RA TAYLOR, AJ TURBERFIELD, JM WORLOCK
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HOT ELECTRON RELAXATION AND TRAPPING IN MODULATION-DOPED GaAs/GaA1As MULTIPLE QUANTUM WELL HETEROSTRUCTURES.

(1985) 567-570

Authors:

JF Ryan, RA Taylor, AJ Turberfield, A Maciel, JM Worlock, AC Gossard, W Wiegmann

Abstract:

There is much current interest in determining the energy relaxation processes of hot carriers confined in quantum well heterostructures. We present measurements of time-resolved photoluminescence from hot carriers and from carrier recombination at shallow traps. The experimental technique is basically the same as described previously except that the laser (h upsilon //L equals 1. 76 eV) excites carriers only in the GaAs layers.
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Determination of domain wall structures in thin foils of soft magnetic alloy

Journal of Magnetism and Magnetic Materials 49:3 (1985) 277-285

Authors:

JN Chapman, GR Morrison, JP Jakubovics, RA Taylor

Abstract:

Domain wall structures in thin foils of a Ni-Fe-Co-Ti alloy have been determined using the differential phase contrast mode of Lorentz electron microscopy. Among the advantages of this mode are that easily interpretable signals can be obtained whilst the experiment is in progress. In accord with theoretical expectation the walls were found to have a vortex structure whose width increased linearly with foil thickness. © 1985.
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Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells

Physica B+C 134:1-3 (1985) 318-322

Authors:

JF Ryan, RA Taylor, AJ Turberfield, JM Worlock

Abstract:

We report the first picosecond time-resolved photoluminescence measurementsof hot-carrier relaxation in a modulation-doped GaAs-GaAlAs MQW in the presence of strong magnetic fields. We have measured the lifetimes of carriers in excited Landau levels and have determined the time-dependent carrier temperature. We find that the cooling rate is slower in applied field tthan at B=0; also there is a significant increase in the cooling rate for B {greater-than or approximate} 10T. We report also the observation of highly time-dependent linewidths of the Landau levels. © 1985.
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