Quantum Optoelectronics

Abstract:

Builiding on earlier studies of single InGaN quantum dots (QDs), we are considering their potential for use in blue- and green-emitting single photon sources. Envisaging a device based on a resonant cavity light emitting diode, we have studied the effect of growing QDs on an underlying AlN/GaN distributed Bragg reflector, and have shown that enhanced single QD emission may be obtained. Additionally, we have studied the effect of the growth and activation of a p-type cap on an underlying QD layer and have shown that the QDs survive the anneal process. © 2007 IOP Publishing Ltd.

Abstract:

Photoluminescence (PL) properties of a single nanorod containing multiple GaN quantum disks separated by AlGaN potential barriers are investigated using micro-PL spectroscopy. Previous studies reported ensemble spectra from many nanorods. The PL spectra show different features depending on the region of the nanorod excited by the laser, including a sharp feature originating from the quantum disk region. The distinct differences between the PL from the different regions are discussed. The results imply that excitons are strongly confined in the quantum disks, and the authors suggest that small quantum disks can be regarded as quantum dots having a discrete density of states. © 2007 American Institute of Physics.

Abstract:

The saturation of exciton resonances with increasing carrier density has been measured in the case of resonant and non-resonant excitations by using a pump-probe technique. We observed that the bleaching density for resonantly excited excitons is considerably higher than that for non-resonantly excited excitons and that with increasing excitation energy, the exciton bleaching density converges to the Mott density of free carrier model. This results suggest that resonant excitons show weaker screening than an unbound electron-hole plasma mixed with excitons and that the transient optical nonlinearities associated with screening and bandgap renormalization are governed for the ratio of excitons to free carriers with different interactions. Also, we observed that the non-resonantly excited excitons had longer lifetimes than the resonantly excited excitons, which we attributed to the relaxation of free carriers and to the polariton bottle-neck effect.

Abstract:

The surface morphologies of AlN and GaN on Si(111) and Si(100) were studied using atomic force microscopy. The AlN buffer layer was deposited using RF sputtering for 30 minutes on Si(111) and Si(100) substrates, and then the specimens were annealed at 850 °C, 950 °C and 1050 °C for 60 minutes in an NH3 atmosphere. It was found that the grains of AlN became larger by increasing the annealing temperature. GaN was grown on AlN/Si(111) and AlN/Si(100) substrates by using a hydride vapor phase epitaxy technique. The surface of GaN grown on the AlN/Si substrate showed thick- thread and fine-thread patterns. The microstructure of GaN grown on the buffer-GaN/Al 2O3 had a step-flow pattern. These phenomena could be explained by a lattice mismatch and the growth temperature. A power spectral density analysis was performed on the GaN surfaces and the results were compared with the experimental data.