Quantum Optoelectronics

Abstract:

The data was taken with temperature-dependent time-integrated, time-resolved, and polarisation-resolved microphotoluminescence, and Hanbury Brown and Twiss experiments from 5 to 250 K. The purpose is to investigate whether non-polar a-plane quantum dots can act as high temperature single photon sources with optical polarisation control beyond the 200 K Peltier cooling threshold. All data were taken during April-May 2016.

Abstract:

The data were created from k.p simulation, polarization-resolved microphotoluminescence, and Hanbury Brown and Twiss experiments, from 2015 to 2016. The data were created to demonstrate the rigorous generation of polarised single photons with a deterministic axis, and to explain the origin of high polarisation degree and fixed axis, in a-plane InGaN quantum dots. All data were hence used in Figures 2-5 in the publication “Direct generation of linearly polarized single photons with a deterministic axis in quantum dots”

Abstract:

Creation: 11.2016-1.2017 Raw data + analysed data by Matlab and Origin For each figure the rawdata underlying it was added as well.

Abstract:

We demonstrate single photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of electron microscopy, cathodoluminescence, time-resolved µPL and photon autocorrelation experiments give a thorough evaluation of the QDs structural and optical properties. The QD exhibits anti-bunched emission up to 100 K, with a measured autocorrelation function of g^((2) ) (0) = 0.28 (0.03) at 5 K. Studies on a statistically significant number of QDs show that these m-plane QDs exhibit very fast radiative lifetimes (260 ± 55 ps) suggesting smaller internal fields than any of the previously reported c-plane and a-plane QDs. Moreover, the observed single photons are almost completely linearly polarized aligned perpendicular to the crystallographic c-axis with a degree of linear polarization of 0.84 ± 0.12. Such InGaN QDs incorporated in a nanowire system meet many of the requirements for implementation into quantum information systems and could potentially open the door to wholly new device concepts.