Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors.

Nano letters 16:8 (2016) 4925-4931

Authors:

K Peng, P Parkinson, JL Boland, Q Gao, YC Wenas, CL Davies, Z Li, L Fu, MB Johnston, HH Tan, C Jagadish

Abstract:

Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm(2) V(-1) s(-1)) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.

Efficient perovskite solar cells by metal ion doping

ENERGY & ENVIRONMENTAL SCIENCE 9:9 (2016) 2892-2901

Authors:

Jacob Tse-Wei Wang, Zhiping Wang, Sandeep Pathak, Wei Zhang, Dane W deQuilettes, Florencia Wisnivesky-Rocca-Rivarola, Jian Huang, Pabitra K Nayak, Jay B Patel, Hanis A Mohd Yusof, Yana Vaynzof, Rui Zhu, Ivan Ramirez, Jin Zhang, Caterina Ducati, Chris Grovenor, Michael B Johnston, David S Ginger, Robin J Nicholas, Henry J Snaith

Electron–phonon coupling in hybrid lead halide perovskites

Nature Communications Nature Publishing Group: Nature Communications 7 (2016)

Authors:

Adam DM Wright, Laura M Herz, Rebecca L Milot, Carla Verdi, Michael B Johnston, Giles E Eperon, Henry J Snaith, Feliciano Giustino, Miguel A Perez-Osorio

Abstract:

Phonon scattering limits charge-carrier mobilities and governs emission line broadening in hybrid metal halide perovskites. Establishing how charge carriers interact with phonons in these materials is therefore essential for the development of high-efficiency perovskite photovoltaics and low-cost lasers. Here we investigate the temperature dependence of emission line broadening in the four commonly studied formamidinium and methylammonium perovskites, HC(NH2)2PbI3, HC(NH2)2PbBr3,CH3NH3PbI3 and CH3NH3PbBr3, and discover that scattering from longitudinal optical phonons via the Fröhlich interaction is the dominant source of electron–phonon coupling near room temperature, with scattering off acoustic phonons negligible. We determine energies for the interacting longitudinal optical phonon modes to be 11.5 and 15.3 meV, and Fro¨hlich coupling constants ofB40 and 60 meV for the lead iodide and bromide perovskites, respectively. Our findings correlate well with first-principles calculations based on many-body perturbation theory, which underlines the suitability of an electronic band-structure picture for describing charge carriers in hybrid perovskites.

Bandgap-Tunable Cesium Lead Halide Perovskites with High Thermal Stability for Efficient Solar Cells

ADVANCED ENERGY MATERIALS 6:8 (2016) ARTN 1502458

Authors:

RJ Sutton, GE Eperon, L Miranda, ES Parrott, BA Kamino, JB Patel, MT Horantner, MB Johnston, AA Haghighirad, DT Moore, HJ Snaith

Effect of Structural Phase Transition on Charge-Carrier Lifetimes and Defects in CH3NH3SnI3 Perovskite.

The journal of physical chemistry letters 7:7 (2016) 1321-1326

Authors:

ES Parrott, RL Milot, T Stergiopoulos, HJ Snaith, MB Johnston, LM Herz

Abstract:

Methylammonium tin triiodide (MASnI3) has been successfully employed in lead-free perovskite solar cells, but overall power-conversion efficiencies are still significantly lower than for lead-based perovskites. Here we present photoluminescence (PL) spectra and time-resolved PL from 8 to 295 K and find a marked improvement in carrier lifetime and a substantial reduction in PL line width below ∼110 K, indicating that the cause of the hindered performance is activated at the orthorhombic to tetragonal phase transition. Our measurements therefore suggest that targeted structural change may be capable of tailoring the relative energy level alignment of defects (e.g., tin vacancies) to reduce the background dopant density and improve charge extraction. In addition, we observe for the first time an above-gap emission feature that may arise from higher-lying interband transitions, raising the prospect of excess energy harvesting.