Electronic structures and photoemission spectroscopy

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Hierarchy of multiple many-body interaction scales in high-temperature superconductors

PHYSICAL REVIEW B 75:17 (2007) ARTN 174506

Authors:

W Meevasana, XJ Zhou, S Sahrakorpi, WS Lee, WL Yang, K Tanaka, N Mannella, T Yoshida, DH Lu, YL Chen, RH He, Hsin Lin, S Komiya, Y Ando, F Zhou, WX Ti, JW Xiong, ZX Zhao, T Sasagawa, T Kakeshita, K Fujita, S Uchida, H Eisaki, A Fujimori, Z Hussain, RS Markiewicz, A Bansil, N Nagaosa, J Zaanen, TP Devereaux, Z-X Shen
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Anomalous Fermi-Surface Dependent Pairing in a Self-Doped High-$T_c$ Superconductor

Phys. Rev. Lett. American Physical Society 97 (2006) 236401-236401

Authors:

Yulin Chen, Akira Iyo, Wanli Yang, Xingjiang Zhou, Donghui Lu, Hiroshi Eisaki, Thomas P Devereaux, Zahid Hussain, Z-X Shen
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Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X
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Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology 12:9 (1997) 1140-1146

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker

Abstract:

Extensive capacitance-voltage (C-V) and conductance-voltage (G-V) measurements have been performed on MIS devices on p-type GaSb at 77 K using an anodically grown oxide as the insulating layer. The C-V characteristics have been measured from 250 Hz to 800 kHz. The high-frequency C-V data and the G-V analysis are in good agreement and show that there is a high density of surface states (∼1013 cm-2 eV-1) which limits the movement of the surface potential to a region of approximately 1/4 of the bandgap. Hence neither accumulation nor inversion can be obtained.
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