Electronic structures and photoemission spectroscopy

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Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence

Chn. J. Lumin. Chinese Academy of Science 2001:3 (2001) 218

Authors:

Liu C. H., Zhu J. J., Lin B. X., Chen Y. L., Peng C., Yang Z., Fu Z. X
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Electrical Properties of the ZnO/Si Heterostructure

Chinese Physics Letters 18:8 (2001) 1108

Abstract:

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V , I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levels of the samples.
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The interface properties of MIS structures on anodically oxidized GaSb

Semiconductor Science and Technology IOP Publishing 12:9 (1997) 1140

Authors:

GLB Houston, Y Chen, J Singleton, NJ Mason, PJ Walker
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Improved photoluminescence from electrochemically passivated GaSb

Semiconductor Science and Technology IOP Publishing 12:4 (1997) 413

Authors:

A Salesse, R Alabedra, Y Chen, M Lakrimi, RJ Nicholas, NJ Mason, PJ Walker
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One dimensional transport and gating of InAs/GaSb structures

Superlattices and Microstructures Elsevier 15:1 (1994) 41

Authors:

Y Chen, DM Symons, M Lakrimi, A Salesse, GB Houston, RJ Nicholas, NJ Mason, PJ Walker
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