John Chalker

Abstract:

We use a simple electrostatic treatment to model recent experiments on quantum Hall systems, in which charging of localised states by addition of integer or fractionally-charged quasiparticles is observed. Treating the localised state as a compressible quantum dot or antidot embedded in an incompressible background, we calculate the electrostatic potential in its vicinity as a function of its charge, and the chemical potential values at which its charge changes. The results offer a quantitative framework for analysis of the observations.

Abstract:

We present detailed calculations of the magnetic ground state properties of Cs$_2$CuCl$_4$ in an applied magnetic field, and compare our results with recent experiments. The material is described by a spin Hamiltonian, determined with precision in high field measurements, in which the main interaction is antiferromagnetic Heisenberg exchange between neighboring spins on an anisotropic triangular lattice. An additional, weak Dzyaloshinkii-Moriya interaction introduces easy-plane anisotropy, so that behavior is different for transverse and longitudinal field directions. We determine the phase diagram as a function of field strength for both field directions at zero temperature, using a classical approximation as a first step. Building on this, we calculate the effect of quantum fluctuations on the ordering wavevector and components of the ordered moments, using both linear spinwave theory and a mapping to a Bose gas which gives exact results when the magnetization is almost saturated. Many aspects of the experimental data are well accounted for by this approach.

Abstract:

We discuss the behaviour of a quantum Hall system when two Landau levels with opposite spin and combined filling factor near unity are brought into energetic coincidence using an in-plane component of magnetic field. We focus on the interpretation of recent experiments under these conditions (Phys. Rev. Lett. 86 (2001) 866; Phys. Rev. B 64 (2001) 121305), in which a large resistance anisotropy develops at low temperatures. Modelling the systems involved as Ising quantum Hall ferromagnets, we suggest that this transport anisotropy reflects domain formation induced by a random field arising from isotropic sample surface roughness. (C) 2003 Elsevier B.V. All rights reserved.