Initial study of deep inelastic scattering with ZEUS at HERA

Physics Letters B 303:1-2 (1993) 183-197

Authors:

M Derrick, D Krakauer, S Magill, B Musgrave, J Repond, S Repond, R Stanek, RL Talaga, J Thron, F Arzarello, R Ayad, G Barbagli, G Bari, M Basile, L Bellagamba, D Boscherini, A Bruni, G Bruni, P Bruni, G Cara Romeo, G Castellini, M Chiarini, L Cifarelli, F Cindolo, F Ciralli, A Contin, S D'Auria, C Del Papa, F Frasconi, P Giusti, G Iacobucci, G Laurenti, G Levi, Q Lin, B Lisowski, G Maccarrone, A Margotti, T Massam, R Nania, C Nemoz, F Palmonari, G Sartorelli, R Timellini, Y Zamora Garcia, A Zichichi, A Bargende, J Crittenden, H Dabbous, K Desch, B Diekmann, T Doeker, M Geerts, G Geitz, B Gutjahr, H Hartmann, J Hartmann, D Haun, K Heinloth, E Hilger, HP Jakob, S Kramarczyk, M Kückes, A Mass, S Mengel, J Mollen, D Monaldi, H Müsch, E Paul, R Schattevoy, JL Schneider, R Wedemeyer, A Cassidy, DG Cussans, N Dyce, HF Fawcett, B Foster, R Gilmore, GP Heath, M Lancaster, TJ Llewellyn, J Malos, CJS Morgado, RJ Tapper, SS Wilson, RR Rau, T Barillari, M Schioppa, G Susinno, A Bernstein, A Caldwell, I Gialas, JA Parsons, S Ritz, F Sciulli, PB Straub, L Wai, S Yang, W Burkot, A Eskreys, K Piotrzkowski

Abstract:

Results are presented on neutral current, deep inelastic scattering measured in collisions of 26.7 GeV electrons and 820 GeV protons. The events typically populate a range in Q2 from 10 to 100 GeV2. The values of x extend down to x ∼ 10-4 which is two orders of magnitude lower than previously measured at such Q2 values in fixed target experiments. The measured cross sections are in accord with the extrapolations of current parametrisations of parton distributions. © 1993.

Production and decay of the Ds1 (2536)+

Physics Letters B Elsevier 303:3-4 (1993) 377-384

Authors:

CLEO Collaboration, JP Alexander, C Bebek, K Berkelman, D Besson, TE Browder, DG Cassel, HA Cho, DM Coffman, PS Drell, R Ehrlich, RS Galik, M Garcia-Sciveres, B Geiser, B Gittelman, SW Gray, DL Hartill, BK Heltsley, K Honscheid, CD Jones, SL Jones, J Kandaswamy, N Katayama, PC Kim, DL Kreinick, GS Ludwig, J Masui, J Mevissen, NB Mistry, CR Ng, E Nordberg, M Ogg, C O'Grady, JR Patterson, D Peterson, D Riley, M Sapper, M Selen, H Worden, M Worris, F Würthwein, P Avery, A Freyberger, J Rodriguez, R Stephens, J Yelton, D Cinabro, S Henderson, K Kinoshita, T Liu, M Saulnier, R Wilson, H Yamamoto, AJ Sadoff, R Ammar, S Ball, P Baringer, D Coppage, N Copty, R Davis, N Hancock, M Kelly, N Kwak, H Lam, Y Kubota, M Lattery, JK Nelson, S Patton, D Perticone, R Poling, V Savinov, S Schrenk, R Wang, MS Alam, IJ Kim, B Nemati, JJ O'Neill, V Romero, H Severini, CR Sun, MM Zoeller, G Crawford, R Fulton, KK Gan, H Kagan, R Kass, J Lee, R Malchow, F Morrow, Y Skovpen, M Sung, C White, J Whitmore, P Wilson, F Butler, X Fu, G Kalbfleisch, M Lambrecht, WR Ross, P Skubic, J Snow, PL Wang, M Wood, D Bortoletto, DN Brown, J Dominick, RL McIlwain, T Miao, DH Miller, M Modesitt, SF Schaffner, EI Shibata, IPJ Shipsey, PN Wang, M Battle, H Kroha, S Roberts, K Sparks, EH Thorndike, CH Wang, S Sanghera, T Skwarnicki, R Stroynowski, M Artuso, M Goldberg, N Horwitz, R Kennett, GC Moneti, F Muheim, S Playfer, Y Rozen, P Rubin, S Stone, M Thulasidas, G Vasseur, G Zhu, AV Barnes, J Bartelt, SE Csorna, Z Egyed, V Jain, P Sheldon, DS Akerib, B Barish, M Chadha, S Chan, DF Cowen, G Eigen, JS Miller, J Urheim, AJ Weinstein, D Acosta, M Athanas, G Masek, B Ong, H Paar, M Sivertz, A Bean, J Gronberg, R Kutschke, S Menary, RJ Morrison, S Nakanishi, HN Nelson, TK Nelson, JD Richman, H Tajima, D Schmidt, D Sperka, MS Witherell, M Procario, S Yang, R Ballest, K Cho, M Daoudi, WT Ford, DR Johnson, K Lingel, M Lohner, P Rankin, JG Smith

A 66 MHz, 32-channel analog memory circuit with data selection for fast silicon detectors

Nuclear Inst. and Methods in Physics Research, A 326:1-2 (1993) 100-111

Authors:

D Munday, A Parker, F Anghinolfi, P Aspell, M Campbell, P Jarron, EHM Heijne, G Meddeler, JC Santiard, H Verweij, C Gössling, R Bonino, AG Clark, C Couyoumtzelis, D La Marra, X Wu, G Moorhead, A Weidberg, D Campbell, P Murray, P Seller, R Stevens, E Beuville, M Rouger, J Teiger

Abstract:

An analog memory array with 64 memory cells for each channel has been designed and manufactured in CMOS. A new skip logic controller allows to write at 66 MHz without dead time and to read out at a lower frequency simultaneously. The input circuit is charge-sensitive and integrates continuously. Pedestal nonuniformity is 1.4 mV rms from cell-to-cell and 3.5 mV rms between channels. The linearity range is -2.5 to +1.5 V, which corresponds to 11 bits. The chip has been used in a particle detection test. © 1993.

NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C

NUCL INSTRUM METH A 326:1-2 (1993) 365-372

Authors:

F ANGHINOLFI, R BARDOS, SJ BATES, R BONINO, AG CLARK, N CLAUSSEN, E FRETWURST, M GLASER, G GORFINE, C GOSSLING, EHM HEIJNE, P JARRON, R KLINGENBERG, F LEMEILLEUR, G LINDSTROM, G MOORHEAD, DJ MUNDAY, E OCCELLI, H PAGEL, B PAPENDICK, MA PARKER, D POLLMANN, A POPPLETON, A ROLF, P SCAMPOLI, T SCHULZ, G TAYLOR, S TOVEY, AR WEIDBERG, X WU, R WUNSTORF

Neutron irradiation of silicon diodes at temperatures of +20°C and -20°C

Nuclear Inst. and Methods in Physics Research, A 326:1-2 (1993) 365-372

Authors:

F Anghinolfi, R Bardos, SJ Bates, R Bonino, AG Clark, N Claussen, E Fretwurst, M Glaser, G Gorfine, C Gössling, EHM Heijne, P Jarron, R Klingenberg, F Lemeilleur, G Lindström, G Moorhead, DJ Munday, E Occelli, H Pagel, B Papendick, MA Parker, D Pollmann, A Poppleton, A Rolf, P Scampoli, T Schulz, G Taylor, S Tovey, AR Weidberg, X Wu, R Wunstorf

Abstract:

We report measurements of the behaviour of silicon diodes when exposed to integrated neutron doses of up to 5 × 1013 neutron/cm2. The measurements have been made at diode temperatures between room temperature and -20°C. From measurements of the diode leakage current and depletion voltage, and consequent evaluations of the effective impurity concentration, the temperature dependence of these quantities is discussed in terms of the annealing behaviour of the diodes. Comments are made on the suitability of silicon as a detector medium for particle physics experiments at future accelerators. © 1993.