Prof Laura Herz FRS

Abstract:

Thermal evaporation is an industrially compatible technique for fabricating metal halide perovskite thin films, without the requirement for hazardous solvents. It offers precise control over film thickness and is a good candidate for large-scale production of commercial optoelectronic metal halide perovskite devices, such as solar cells. The use of additives to passivate electronic defects in solution-processed metal halide perovskite has led to dramatic increases in device performance. However, there are a few reports of vapor-deposited films with coevaporated passivating agents. Triphenylphosphine oxide (TPPO) has been used as an effective surface passivating agent in solution-processed metal halide perovskite films. It is a promising candidate passivating agent for coevaporation, where it is beginning to be used with encouraging results. However, here we report that triphenylphosphine oxide is incompatible with thermal deposition in the same deposition chamber. Such TPPO remnants are found to result in severe suppression of the perovskite phase, long-range crystalline ordering, and optical absorption of lead halide perovskite films subsequently deposited in the same chamber. TPPO contamination persists even through repeated baking cycles, with the reduction of the contaminant to acceptable levels requiring vacuum chamber dismantling and manual cleaning. We conclude that TPPO should not be coevaporated in order to prevent the contamination of future batches.

Abstract:

New compounds are discovered in the under-explored d 10 –s 2 (Cu–Sn) family using exploratory synthesis guided by computational tools. Band-gaps in the visible region with moderate charge-carrier mobilities make these potential solar absorbers. We explore multiple-cation chalco–halide phase fields evaluated by their synthetic accessibility using machine learning models. Exploratory synthesis guided by computational tools leads to the discovery of two new compounds; CuSn 2 SI 3 and Cu 0.35 Sn 5.29 S 2 I 7 , their structures, and electronic and optical properties are reported herein. This is the first report of a stable quaternary compound in the Cu–Sn–S–I phase field. The two new compounds show related crystal structures where Sn 4 S 2 I 4 layers are a common structural motif in both. These Sn 4 S 2 I 4 layers are connected by Cu 2 I 2 layers and disordered Cu–Sn–I layers, forming the three-dimensional structures of CuSn 2 SI 3 and Cu 0.35 Sn 5.29 S 2 I 7 respectively. Electronic band structure calculations using density functional theory show the presence of a direct band gap in CuSn 2 SI 3 and suggest anisotropic transport, in line with the layered structure of the compound. A mixture of the two compounds with ∼86% CuSn 2 SI 3 , shows a band gap in the visible region, close to 2.1 eV and a significant photo-induced charge carrier mobility of ∼1.3 cm 2 V −1 s −1 . This demonstrates Cu–Sn chalco–halides can form a promising phase space to explore for solar absorber materials, with further design and tuning of band gap.