LHCb

Abstract:

The results of a search for the rare two-body charmless baryonic decays $B^0 \to p \bar{p}$ and $B_s^0 \to p \bar{p}$ are reported. The analysis uses a data sample, corresponding to an integrated luminosity of 0.9 fb$^{-1}$, of $pp$ collision data collected by the LHCb experiment at a centre-of-mass energy of 7 TeV. An excess of $B^0 \to p \bar{p}$ candidates with respect to background expectations is seen with a statistical significance of 3.3 standard deviations. This is the first evidence for a two-body charmless baryonic $B^0$ decay. No significant $B_s^0 \to p \bar{p}$ signal is observed, leading to an improvement of three orders of magnitude over previous bounds. If the excess events are interpreted as signal, the 68.3% confidence level intervals on the branching fractions are {eqnarray} \cal{B}(B^0 \to p \bar{p}) & = & (1.47 \,^{+0.62}_{-0.51} \,^{+0.35}_{-0.14}) \times 10^{-8} \,, *{0.3cm} \cal{B}(B_s^0 \to p \bar{p}) & = & (2.84 \,^{+2.03}_{-1.68} \,^{+0.85}_{-0.18}) \times 10^{-8} \,, {eqnarray} where the first uncertainty is statistical and the second is systematic.

Abstract:

The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately 45 × 1012 1 MeV neutron equivalent (1 MeV n eq). At the operational sensor temperature of approximately -7 °C, the average rate of sensor current increase is 18 μA per fb -1, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of Eg = 1.16±0.03±0. 04 eV obtained. The first observation of n+-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around 15 × 1012 of 1 MeV neq. The only n+-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately 3 × 1012 1 MeV neq, a decrease in the Effective Depletion Voltage (EDV) of around 25 V is observed. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n +-on-n type sensors, with rates of (1.43±0.16) × 10 -12 V/ 1 MeV neq and (1.35±0.25) × 10 -12 V/ 1 MeV neq measured for n+-on-p and n+-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.© CERN 2013.