A Nanophotonic Structure Containing Living Photosynthetic Bacteria.

Small (Weinheim an der Bergstrasse, Germany) (2017)

Authors:

D Coles, LC Flatten, T Sydney, E Hounslow, SK Saikin, A Aspuru-Guzik, V Vedral, JK Tang, RA Taylor, JM Smith, DG Lidzey

Abstract:

Photosynthetic organisms rely on a series of self-assembled nanostructures with tuned electronic energy levels in order to transport energy from where it is collected by photon absorption, to reaction centers where the energy is used to drive chemical reactions. In the photosynthetic bacteria Chlorobaculum tepidum, a member of the green sulfur bacteria family, light is absorbed by large antenna complexes called chlorosomes to create an exciton. The exciton is transferred to a protein baseplate attached to the chlorosome, before migrating through the Fenna-Matthews-Olson complex to the reaction center. Here, it is shown that by placing living Chlorobaculum tepidum bacteria within a photonic microcavity, the strong exciton-photon coupling regime between a confined cavity mode and exciton states of the chlorosome can be accessed, whereby a coherent exchange of energy between the bacteria and cavity mode results in the formation of polariton states. The polaritons have energy distinct from that of the exciton which can be tuned by modifying the energy of the optical modes of the microcavity. It is believed that this is the first demonstration of the modification of energy levels within living biological systems using a photonic structure.

Interplay between many body effects and Coulomb screening in the optical bandgap of atomically thin MoS2.

Nanoscale 9:30 (2017) 10647-10652

Authors:

Y Park, SW Han, CCS Chan, BPL Reid, RA Taylor, N Kim, Y Jo, H Im, KS Kim

Abstract:

Due to its unique layer-number dependent electronic band structure and strong excitonic features, atomically thin MoS2 is an ideal 2D system where intriguing photoexcited-carrier-induced phenomena can be detected in excitonic luminescence. We perform micro-photoluminescence (PL) measurements and observe that the PL peak redshifts nonlinearly in mono- and bi-layer MoS2 as the excitation power is increased. The excited carrier-induced optical bandgap shrinkage is found to be proportional to n4/3, where n is the optically-induced free carrier density. The large exponent value of 4/3 is explicitly distinguished from a typical value of 1/3 in various semiconductor quantum well systems. The peculiar n4/3 dependent optical bandgap redshift may be due to the interplay between bandgap renormalization and reduced exciton binding energy.

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 254:8 (2017) ARTN 1600675

Authors:

SK Patra, T Wang, TJ Puchtler, T Zhu, RA Oliver, RA Taylor, S Schulz

Temperature-dependent fine structure splitting in InGaN quantum dots

APPLIED PHYSICS LETTERS 111:5 (2017) ARTN 053101

Authors:

T Wang, TJ Puchtler, T Zhu, JC Jarman, CC Kocher, RA Oliver, RA Taylor

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Nanophotonics De Gruyter Open 6:5 (2017) 1175-1183

Authors:

Tong Wang, Tim J Puchtler, Saroj K Patra, Tongtong Zhu, Muhammad Ali, Tom Badcock, Tao Ding, Rachel A Oliver, Stefan Schulz, Robert A Taylor

Abstract:

We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modelling. The experimental study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.