Quantum Optoelectronics

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Electrically driven single InGaN/GaN quantum dot emission

APPLIED PHYSICS LETTERS 93:23 (2008) ARTN 233103

Authors:

Anas F Jarjour, Robert A Taylor, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Abbes Tahraoui
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Fabrication of Ultrathin Single-Crystal Diamond Membranes

ADVANCED MATERIALS 20:24 (2008) 4793-+

Authors:

Barbara A Fairchild, Paolo Olivero, Sergey Rubanov, Andrew D Greentree, Felix WaIdermann, Robert A Taylor, Ian Walmsley, Jason M Smith, Shane Huntington, Brant C Gibson, David N Jamieson, Steven Prawer
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Band structure changes in carbon nanotubes caused by MnTe2 crystal encapsulation

Aip Conference Proceedings 893 (2007) 1047-1048

Authors:

LJ Li, TW Lin, J Doig, IB Mortimer, JG Wiltshire, RA Taylor, J Sloan, MLH Green, RJ Nicholas

Abstract:

Modification of the band structure of single-walled carbon nanotubes (SWNTs) through encapsulation of the inorganic material manganese ditelluride (MnTe2) is reported. We show that this leads to a global reduction of their 1st (E11S) and 2nd (E22S) band gap energies by a similar percentage (up to 3.8%) and interpret this as due to a lowering of the carbon-carbon transfer integrals. © 2007 American Institute of Physics.
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Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs

Aip Conference Proceedings 893 (2007) 1003-1004

Authors:

KH Lee, JH Na, S Birner, SN Yi, RA Taylor, YS Park, CM Park, TW Kang

Abstract:

We present a systematic investigation of free-carrier screening in coupled asymmetric GaN quantum discs with embedded AlGaN barriers using time-integrated and time-resolved micro-photoluminescence measurements, supported by three-dimensional multi-band k.p computational modeling. Free-carrier screening effects decreased with the barrier thickness, which indicates that the source of the free-carriers were carriers tunneling through the barrier. © 2007 American Institute of Physics.
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Optical studies of non-linear absorption in single InGaN/GaN quantum dots

Aip Conference Proceedings 893 (2007) 953-954

Authors:

AF Jarjour, RA Taylor, RW Martin, IM Watson, RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys

Abstract:

Micro-photoluminescence properties of single InGaN/GaN quantum dots (QDs) are investigated using sub-bandgap excitation by 1 ps pulses from a Ti:sapphire laser. This results in almost complete suppression of background emission arising from the underlying quantum well to which the QDs are coupled. Photoluminescence excitation spectra undertaken using this technique show evidence of p-states. The non-linear intensity dependence of the emission is also discussed. © 2007 American Institute of Physics.
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