Simone Fasciati

Abstract:

Crosstalk between qubits fundamentally limits the scalability of quantum processors, necessitating physics-based models that can handle the complexity of large qubit arrays. Here, we develop a comprehensive theoretical and experimental framework that captures residual interactions between both adjacent and nonadjacent qubits in fixed-frequency transmon lattices. The model integrates the combined effects of exponential localization in banded capacitance matrices, suppression of virtual couplings through detuning products across intermediate modes, and evanescent decay of below-cutoff electromagnetic fields, yielding predictive scaling relations for coupling strength as a function of spatial separation and spectral detuning. Experimental characterization of a 4 × 4 superconducting qubit lattice with inductive shunt pillars reveals exponential spatial decay and frequency-dependent suppression consistent with theoretical predictions, achieving quantitative agreement for all nearest-neighbor couplings across the 4 – 6 GHz operating range. Our results show that standard dispersive Hamiltonian approximations systematically overestimate long-range coupling when spatial and spectral dependencies are neglected; these errors propagate into circuit simulation and design strategies. Our framework provides design guidance for crosstalk mitigation in larger-scale quantum processors under realistic fabrication constraints, addressing a bottleneck in scalability.

Abstract:

Decoherence in superconducting quantum circuits, caused by loss mechanisms like material imperfections and two-level system (TLS) defects, remains a major obstacle to improving the performance of quantum devices. In this work, we present atomic-level characterization of cross-sections of a Josephson junction and a spiral resonator to assess the quality of critical interfaces. Employing scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy and electron-energy loss spectroscopy, we identify structural imperfections associated with oxide layer formation and carbon-based contamination, and correlate these imperfections to the patterning and etching steps in the fabrication process and environmental exposure. These results suggest that TLS imperfections at critical interfaces significantly contribute to limiting device performance, emphasizing the need for an improved fabrication process.