Semiconductors group

Abstract:

Mixed-halide perovskites exhibit ideal band gaps for use in perovskite-based multijunction photovoltaics, but stable performance is compromised by light-induced halide segregation. Photoluminescence (PL) tracking is universally used to monitor such photoinstability; however, here we reveal that such data do not accurately quantify halide segregation. We utilize a combination of simultaneously recorded PL and X-ray diffraction (XRD) measurements to explore CH3NH3Pb­(I1–x Br x )3 films across 18 different halide ratios. While PL data suggests that segregation rates increase exponentially with bromide fraction x, XRD patterns reveal that they are actually unchanged. We demonstrate that PL cannot accurately reflect the rate and extent of halide segregation because it is governed by charge funneling to iodide-rich minority domains, which is strongly influenced by additional factors, including luminescence efficiency, band energetics, and charge extraction. To assess the efficacy of treatments to suppress such photoinstabilities, it is therefore essential to probe changes across the full material volume, e.g. by monitoring XRD or absorption spectra.

Abstract:

We explore multiple-cation chalco–halide phase fields evaluated by their synthetic accessibility using machine learning models. Exploratory synthesis guided by computational tools leads to the discovery of two new compounds; CuSn₂SI₃ and Cu_0.35Sn_5.29S₂I₇, their structures, and electronic and optical properties are reported herein. This is the first report of a stable quaternary compound in the Cu–Sn–S–I phase field. The two new compounds show related crystal structures where Sn₄S₂I₄ layers are a common structural motif in both. These Sn₄S₂I₄ layers are connected by Cu₂I₂ layers and disordered Cu–Sn–I layers, forming the three-dimensional structures of CuSn₂SI₃ and Cu_0.35Sn_5.29S₂I₇ respectively. Electronic band structure calculations using density functional theory show the presence of a direct band gap in CuSn₂SI₃ and suggest anisotropic transport, in line with the layered structure of the compound. A mixture of the two compounds with ∼86% CuSn₂SI₃, shows a band gap in the visible region, close to 2.1 eV and a significant photo-induced charge carrier mobility of ∼1.3 cm² V⁻¹ s⁻¹. This demonstrates Cu–Sn chalco–halides can form a promising phase space to explore for solar absorber materials, with further design and tuning of band gap.

Abstract:

Mixed-halide perovskites offer ideal bandgaps for tandem solar cells, but they suffer from light-induced halide segregation, which compromises their operational stability. Here, we directly probe the impact of halide segregation on charge-carrier dynamics at the interface between a mixed-halide perovskite and charge transport layers by using a free-space synchronous multimodal spectroscopy approach, combining time-resolved microwave conductivity, time-resolved photoluminescence (PL) and steady-state PL. We present a method to distinguish directly between charge-carrier dynamics dominated by either majority or minority carriers, enabling us to isolate effects arising from charge-selective extraction from the perovskite to commonly used hole- or electron transport layers, i.e. poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and SnO2, respectively. We show that halide segregation creates iodide-rich phases that capture charge carriers within sub-nanoseconds, which slightly reduces their mobilities at microwave frequencies. We reveal that charge extraction from such iodide-rich domains is still surprisingly feasible, but competes with enhanced radiative recombination resulting from higher charge concentrations caused by funnelling into these minority phases. We demonstrate that together such effects reduce charge diffusion lengths and can account for the widely observed reduction in open-circuit voltages and short-circuit currents in solar cells under operational conditions. Our findings unravel the causes underpinning the adverse impact of halide segregation and provide guidelines to improve device performance.

Abstract:

Halide perovskite solar cells have demonstrated a rapid increase in power conversion efficiencies. Understanding and mitigating remaining carrier losses in halide perovskites is now crucial to enable further increases to approach their practical efficiency limits. Recent observations in halide perovskites have revealed processes such as shallow carrier trapping, which give rise to an apparent non-radiative bimolecular channel that is difficult to distinguish from intrinsic radiative recombination. Here, we quantify this shallow-trap manifestation by jointly analyzing time-resolved photoluminescence and quantum efficiency to separate the total second-order term into radiative (ηesck2r) and shallow-trap-mediated non-radiative contributions (k2non), and evaluate their device impact. We show that k2non is strongly modulated by temperature and surface chemistry and thus depends on extrinsic factors and its origin is independent from deep traps, whereas the intrinsic radiative coefficient and intrinsic second-order recombination follow detailed-balance expectations and align with theoretical evaluations through van Roosbroeck–Shockley relations. Based on density functional theory simulations and Quasi-Fermi level calculations, we propose that surface states are the primary origin of this shallow-trap-related second-order component, contributing up to ∼80 mV of the overall reduction in Voc at room temperature. This work reveals that the origin of carrier losses from two non-radiative recombination types (first and second order) are not linked, emphasizing the need for distinctive mitigation strategies targeting each type to unlock the full efficiency potential of perovskite solar cells.