Angadjit Singh

Abstract:

This study reports the structural and magnetic properties of Mn-doped Bi₂Te₃ thin films grown by magnetron sputtering. The films exhibit a ferromagnetic response that depends on the Mn doping concentration, as revealed by X-ray magnetic circular dichroism measurements. At an Mn concentration of ∼6.0%, a magnetic moment of (3.48 ± 0.25) μB/Mn was determined. Structural analysis indicated the presence of a secondary MnTe𝑥 phase, which complicates the interpretation of the magnetic properties. Additionally, the incorporation of Mn ions within the van der Waals gap and substitutional doping on Bi sites contributes to the observed complex magnetic properties. Intriguingly, a decrease in magnetic moment per Mn was observed with increasing Mn concentration, which is consistent with the formation of the intrinsic magnetic topological insulator MnBi₂Te₄.

Abstract:

The van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α-In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α-In2Se3 heterostructure, for which a decrease in the Tuinstra-Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α-In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride-encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.