Single GaAs/AlGaAs Nanowire Photoconductive Terahertz Detectors
Institute of Electrical and Electronics Engineers (IEEE) (2014) 221-222
Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (2012) 135-136
Abstract:
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1]. © 2012 IEEE.Doping influence on the ability to form single crystals
Chemical Physics Letters Elsevier 501:4-6 (2011) 330-334
The influence of subwavelength geometry on extracting the electrical properties of semiconductors by terahertz spectroscopy
APL Photonics AIP Publishing LLC