Direct experimental determination of the topological winding number of skyrmions in Cu2OSeO3
Nature Communications Springer Nature 8 (2017) 14619
Abstract:
The mathematical concept of topology has brought about significant advantages that allow for a fundamental understanding of the underlying physics of a system. In magnetism, the topology of spin order manifests itself in the topological winding number which plays a pivotal role for the determination of the emergent properties of a system. However, the direct experimental determination of the topological winding number of a magnetically ordered system remains elusive. Here, we present a direct relationship between the topological winding number of the spin texture and the polarized resonant X-ray scattering process. This relationship provides a one-to-one correspondence between the measured scattering signal and the winding number. We demonstrate that the exact topological quantities of the skyrmion material Cu2OSeO3 can be directly experimentally determined this way. This technique has the potential to be applicable to a wide range of materials, allowing for a direct determination of their topological properties.Room-temperature helimagnetism in FeGe thin films
Scientific Reports Nature Publishing Group 7 (2017) 123
Abstract:
Chiral magnets are promising materials for the realisation of high-density and low-power spintronic memory devices. For these future applications, a key requirement is the synthesis of appropriate materials in the form of thin films ordering well above room temperature. Driven by the Dzyaloshinskii-Moriya interaction, the cubic compound FeGe exhibits helimagnetism with a relatively high transition temperature of 278K in bulk crystals. We demonstrate that this temperature can be enhanced significantly in thin films. Using x-ray spectroscopic and ferromagnetic resonance techniques, we provide unambiguous experimental evidence for long-wavelength helimagnetic order at room temperature and magnetic properties similar to the bulk material. We obtain αintr = 0:0036 ± 0:0003 at 310K for the intrinsic damping parameter. We probe the dynamics of the system by means of muon-spin rotation, indicating that the ground state is reached via a freezing out of slow dynamics. Our work paves the way towards the fabrication of thin films of chiral magnets that host certain spin whirls, so-called skyrmions, at room temperature and potentially offer integrability into modern electronics.Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure
Physical Review B - Condensed Matter and Materials Physics American Physical Society (2016)
Abstract:
We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500 A) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature Tc assumes a thickness-independent enhanced value of ≥43 K as compared with that of bulk MnSi, where Tc ≈ 29 K. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111]-direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi — except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3
Applied Physics Letters American Institute of Physics 109 (2016) 192406
Abstract:
Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in highdensity, low-energy nonvolatile memory. Nevertheless, they normally appear in an ordered, single-domain lattice phase, which makes it difficult to write information unless they are spatially broken up into smaller units, each representing a bit. Thus, the formation and manipulation of skyrmion lattice domains is a prerequisite for memory applications. Here, using an imaging technique based on resonant magnetic x-ray diffraction, we demonstrate the mapping and manipulation of skyrmion lattice domains in Cu2OSeO3. The material is particularly interesting for applications owing to its insulating nature, allowing for electric fielddriven domain manipulation.Proposal of a micromagnetic standard problem for ferromagnetic resonance simulations
Journal of Magnetism and Magnetic Materials Elsevier 421 (2016) 428-439