Nanoscale solid-state quantum computing.
Philos Trans A Math Phys Eng Sci 361:1808 (2003) 1473-1485
Abstract:
Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.Nanoscale solid-state quantum computing
Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences 361:1808 (2003) 1473-1485
Abstract:
Most experts agree that it is too early to say how quantum computers will eventually be built, and several nanoscale solid-state schemes are being implemented in a range of materials. Nanofabricated quantum dots can be made in designer configurations, with established technology for controlling interactions and for reading out results. Epitaxial quantum dots can be grown in vertical arrays in semiconductors, and ultrafast optical techniques are available for controlling and measuring their excitations. Single-walled carbon nanotubes can be used for molecular self-assembly of endohedral fullerenes, which can embody quantum information in the electron spin. The challenges of individual addressing in such tiny structures could rapidly become intractable with increasing numbers of qubits, but these schemes are amenable to global addressing methods for computation.Fermi-surface topology and the effects of intrinsic disorder in a class of charge-transfer salts containing magnetic ions, \beta''-(BEDT-TTF)_4[(H_3O)M(C_2O_4)_3]Y
(2003)
Angle-dependence of the magnetotransport and Anderson localization in a pressure-induced organic superconductor
SYNTHETIC MET 137:1-3 (2003) 1287-1288
Abstract:
The conducting properties of the pressure-induced, layered organic superconductor (BEDT-TTF)(3)Cl-2 . 2H(2)O have been studied at 13.5 and 14.0 kbar using low temperatures, high magnetic fields and two-axis rotation. The observed negative magnetoresistance at 13.5 kbar can be explained by considering Anderson localization within the layers. Further application of pressure destroys the effects of localization.Magnetotransport measurements on beta ''-(BEDT-TTF)(4)[(H3O)Ga3+(C2O4)(3)](center dot) C6N5NO2
SYNTHETIC MET 137:1-3 (2003) 1313-1314