Donal Bradley

Abstract:

All-polymer phototransistors were fabricated using both glass and flexible plastic film substrates by employing bulk heterojunction channel layers of p-type polymer (P3HT) and n-type polymer (THBT-ht). The devices could detect the entire visible light because the n-type polymer could sense photons in the deep red parts (>650 nm). The responsivity of devices was higher at the lower light intensity, while it could be controlled by varying the gate and/or drain voltages. Similar performances were measured for flexible all-polymer phototransistors with a bottom-source/drain and top-gate electrode configuration.

Abstract:

Optical and electrical studies reveal spin switching bistability from polymer thin films.

Abstract:

AbstractPolymer solar cells have been spotlighted due to their potential for low-cost manufacturing but their efficiency is still less than required for commercial application as lightweight/flexible modules. Forming a dipole layer at the electron-collecting interface has been suggested as one of the more attractive approaches for efficiency enhancement. However, only a few dipole layer material types have been reported so far, including only one non-ionic (charge neutral) polymer. Here we show that a further neutral polymer, namely poly(2-ethyl-2-oxazoline) (PEOz) can be successfully used as a dipole layer. Inclusion of a PEOz layer, in particular with a nanodot morphology, increases the effective work function at the electron-collecting interface within inverted solar cells and thermal annealing of PEOz layer leads to a state-of-the-art 10.74% efficiency for single-stack bulk heterojunction blend structures comprising poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′]dithiophene-alt-3-fluorothieno[3,4-b]thiophene-2-carboxylate] as donor and [6,6]-phenyl-C71-butyric acid methyl ester as acceptor.

Abstract:

Pentacene diodes with 2,3,4,5,6-pentafluorobenzenethiol-coated Au anodes show high current densities of 100 A cm−2 at 3 V with rectification ratios of 107. Using such diodes in rectifier circuits allows an output voltage of 3.8 V to be achieved from a 10 V sinusoidal input at 1 GHz.