Plasmonic sinks for the selective removal of long-lived states.
ACS nano 5:12 (2011) 9958-9965
Abstract:
The use of plasmonic nanostructures for the removal of unwanted long-lived states is investigated. We show that the total decay rate of such a state can be increased by up to 4 orders of magnitude, as compared to its intrinsic radiative decay rate, while leaving other neighboring optical transitions unaffected. For the specific case of molecular triplet excited states, we show that the use of a "plasmonic sink" has the potential to reduce photobleaching and ground-state depletion by at least 2 orders of magnitude. We consider, in addition, the impact of such structures on the performance of organic semiconductor lasers and show that, under realistic device conditions, plasmonic sinks have the capacity to increase the achievable laser repetition rate by a factor equal to the triplet decay rate enhancement. We conclude by studying the effect of exciton diffusion on the triplet density in the presence of metallic nanoparticles.Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer.
ACS nano 5:12 (2011) 9824-9835
Abstract:
We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) molecules. The addition of an insulating polymer, polystyrene (PS), does not disrupt the π-π stacking of the TIPS-Pentacene molecules. Blending in fact improves the uniformity of the molecular morphology and the active layer coverage within the device and reduces the variation in molecular orientation between polycrystalline domains. For OTFT performance, blending enhances the saturation mobility from 0.22 ± 0.05 cm(2)/(V·s) (TIPS-Pentacene) to 0.72 ± 0.17 cm(2)/(V·s) (TIPS-Pentacene:PS) in addition to improving the quality of the interface between TIPS-Pentacene and the gate dielectric in the channel, resulting in threshold voltages of ∼0 V and steep subthreshold slopes.Impact of Fullerene Molecular Weight on P3HT:PCBM Microstructure Studied Using Organic Thin‐Film Transistors
Advanced Energy Materials Wiley 1:6 (2011) 1176-1183
A Preliminary Study of Vapour-Phase Polymerized Poly(3,4-ethylenedioxythiophene) as a Transparent Neural Electrode
Institute of Electrical and Electronics Engineers (IEEE) (2011) 1575-1578
Surface plasmon coupled emission using conjugated light-emitting polymer films [Invited]
Optical Materials Express Optica Publishing Group 1:6 (2011) 1127