Integrated thin-film polymer/fullerene photodetectors for on-chip microfluidic chemiluminescence detection.
Lab on a chip 7:1 (2007) 58-63
Abstract:
We report the use of solution-processed thin-film organic photodiodes for microscale chemiluminescence. The active layer of the photodiodes comprised a 1 : 1 blend by weight of the conjugated polymer poly(3-hexylthiophene) [P3HT] and [6,6]-phenyl-C(61)-butyric acid-methylester [PCBM]--a soluble derivative of C(60). The devices had an active area of 1 mm x 1 mm, and a broad-band response from 350 to 700 nm, with an external quantum efficiency of more than 50% between 450 and 550 nm. The photodiodes have a simple layered structure that permits facile integration with planar chip-based systems. To evaluate the suitability of the organic devices as integrated detectors for microscale chemiluminescence, a peroxyoxalate based chemiluminescence reaction (PO-CL) was monitored within a poly(dimethyl-siloxane) (PDMS) microfluidic device. Quantitation of hydrogen peroxide indicated excellent linearity and yielded a detection limit of 10 microM, comparable with previously reported results using micromachined silicon microfluidic chips with integrated silicon photodiodes. The combination of organic photodiodes with PDMS microfluidic chips offers a means of creating compact, sensitive and potentially low-cost microscale CL devices with wide-ranging applications in chemical and biological analysis and clinical diagnostics.Efficient flexible polymer light emitting diodes with conducting polymer anodes
Journal of Materials Chemistry Royal Society of Chemistry (RSC) 17:33 (2007) 3551-3554
Monolithically integrated organic light emitting diodes and photodetectors for lab-on-a-chip applications
PROCEEDINGS OF THE FIRST SHENYANG INTERNATIONAL COLLOQUIUM ON MICROFLUIDICS (2007) 165-166
Patterning of organic devices by interlayer lithography
Journal of Materials Chemistry Royal Society of Chemistry (RSC) 17:11 (2007) 1043-1049
Electric field distribution in polyfluorene based light-emitting diodes upon insertion of interfacial layer
IDW '06 - Proceedings of the 13th International Display Workshops 2 (2006) 1343-1344