Dr. Krishanu Dey

In this work the one dimensional device simulation of lead-free perovskite solar cell of CH 3 NH 3 SnI 3 absorber perovskite material is performed. The parameters which affect the overall performance of the solar cell are investigated and it is observed that the absorber thickness, doping concentrations of HTM (hole transport material), ETM (electron transport material) and perovskite absorber and temperature, influence the solar cell performance. The optimized performance of the perovskite solar cells with PCE (power conversion efficiency) of 30.59%, is obtained when the thicknesses of perovskite was 300nm and the doping concentrations of Cu2O, PCBM and perovskite were 9×10 21 cm- 3 , 1×10 21 cm -3 and 1×10 13 cm -3 respectively. It is observed that suitable optimization of material parameters and device dimensions may lead to high efficiency Perovskite solar cell.

Multi-junction solar cells based on III-V materials are widely utilized for space applications owing to their light weight and very high efficiency. When used for terrestrial applications, they are used in concentrator systems to boost the efficiency and reduce the effective solar cell area to enhance the performance-to-cost ratio. However, the efficiency drops as the light intensity goes beyond a certain value mainly because of the sharp drop in fill factor. In this study, InP and InGaP were designed to be the bottom and top cell absorbers for multi-junction architecture. Effects of variation of Ga mole fraction in InGaP and the top cell absorber thickness on the overall electrical performance of the solar cell were simulated in SILVACO TCAD software. When used in the concentrator conditions, the maximum efficiency of 28.4076% was obtained under 2 suns and efficiency was found to drop drastically at higher intensities.