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CMP
Credit: Jack Hobhouse

Dr Severin Habisreutinger

Long Term Visitor

Sub department

  • Condensed Matter Physics
severin.habisreutinger@physics.ox.ac.uk
Telephone: 01865 (2)82327
Robert Hooke Building, room G24
  • About
  • Publications

The Role of Dimethylammonium in Bandgap Modulation for Stable Halide Perovskites

ACS Energy Letters American Chemical Society (ACS) 5:6 (2020) 1856-1864

Authors:

Giles E Eperon, Kevin H Stone, Laura E Mundt, Tracy H Schloemer, Severin N Habisreutinger, Sean P Dunfield, Laura T Schelhas, Joseph J Berry, David T Moore
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Elucidating the Role of a Tetrafluoroborate‐Based Ionic Liquid at the n‐Type Oxide/Perovskite Interface

Advanced Energy Materials Wiley 10:4 (2020)

Authors:

Nakita K Noel, Severin N Habisreutinger, Bernard Wenger, Yen‐Hung Lin, Fengyu Zhang, Jay B Patel, Antoine Kahn, Michael B Johnston, Henry J Snaith
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Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells

Nature Communications Springer Nature 10:1 (2019) 4498

Authors:

Zhibin Yang, Zhenhua Yu, Haotong Wei, Xun Xiao, Zhenyi Ni, Bo Chen, Yehao Deng, Severin N Habisreutinger, Xihan Chen, Kang Wang, Jingjing Zhao, Peter N Rudd, Joseph J Berry, Matthew C Beard, Jinsong Huang
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Rapid Charge-Transfer Cascade through SWCNT Composites Enabling Low-Voltage Losses for Perovskite Solar Cells

ACS Energy Letters American Chemical Society (ACS) 4:8 (2019) 1872-1879

Authors:

Severin N Habisreutinger, Nakita K Noel, Bryon W Larson, Obadiah G Reid, Jeffrey L Blackburn
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Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics

Energy and Environmental Science Royal Society of Chemistry (2019)

Authors:

Nakita Noel, Habisreutinger, A Pellaroque, F Pulvirenti, Bernard Wenger, F Zhang, Yen-Hung Lin, OG Reid, J Leisen, Y Zhang, S Barlow, Marder, A Kahn, HJ Snaith, CB Arnold, BP Rand

Abstract:

We demonstrate a method for controlled p-doping of the halide perovskite surface using molecular dopants, resulting in reduced non-radiative recombination losses and improved device performance.

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