Mid-infrared luminescence from coupled quantum dots and wells
PHYSICA E 21:2-4 (2004) 341-344
Abstract:
Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 mum. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model. (C) 2003 Elsevier B.V. All rights reserved.Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
PHYSICA E 20:3-4 (2004) 204-210
Abstract:
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved.Controlled orientation of ellipsoidal fullerene C70 in carbon nanotubes
APPLIED PHYSICS LETTERS 84:5 (2004) 792-794
Depolarization of the ground state in the quantum Hall ferromagnet and its dependence on g-factor
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19:2 (2004) PII S0268-1242(04)68215-0
Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
PHYSICAL REVIEW B 70:15 (2004) ARTN 155306