Robin Nicholas

Abstract:

Magnetophonon resonance is described in simple terms which demonstrate its sensitivity and usefulness in the study of the electronic properties of semiconductors. A description is given in terms of a resonant quantum effect occurring in high magnetic fields. The recent developments and applications of two-dimensional electron gas and quantum wells have reawakened particular interest in its use to study these systems. Magnetophonon resonance has been studied in both heterojunctions and super-lattices of GaAs-(Al,Ga)As, (Ga-In) As-InP and (Ga,In)As-(Al,In)As. The detailed analysis of the experimental results has enabled the study of the two-dimensional behavior of the electrons, confined in the quantum well at the interface of the heterojunction, over a wide range of temperature up to 20 degree C, the identification of the dominant electron-phonon interaction processes in the neighborhood of the interface and the influence of the growth technology, a comparative study of the role played by the electrically inactive semiconductor in the heterostructure in determining the nature and strength of the electron-phonon interaction.