System tests of radiation hard optical links for the ATLAS semiconductor tracker
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 443:2 (2000) 430-446
Abstract:
A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed.Λ and Λ̄ polarization from deep inelastic muon scattering
European Physical Journal C 17:2 (2000) 263-267
Abstract:
We report results of the first measurements of Λ and Λ̄ polarization produced in deep inelastic polarized muon scattering on the nucleon. The results are consistent with an expected trend towards positive polarization with increasing cursive Greek chiF. The polarizations of Λ and Λ̄ appear to have opposite signs. A large negative polarization for Λ at low positive cursive Greek chiF is observed and is not explained by existing models. A possible interpretation is presented.Λ and (Λ)over-bar polarization from deep in elastic muon scattering
EUROPEAN PHYSICAL JOURNAL C 17:2 (2000) 263-267
Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT
P SOC PHOTO-OPT INS 4134 (2000) 206-213
Abstract:
This paper reports the radiation hardness of optical components to be used in the binary readout of one of the next generation of detectors in high energy physics. The optical components will have to sustain a total ionising dose of 500 kGy and a 1 MeV equivalent neutron fluence of 10(15)n cm(-2). Emitters of VCSEL type have been chosen and have shown a shift of 1 mA in the laser threshold current after irradiation, but are still suitable for our purpose. The epitaxial Si PIN photodiode receivers have an acceptable 30% drop in responsivity providing a higher reverse bias is applied. Speed and lifetime of both components appear to be unaffected by the radiation damage. Temperature characteristics showing differences from un-irradiated materials will be also presented.System tests of radiation hard optical links for the ATLAS semiconductor tracker
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 443:2-3 (2000) 430-446