Moritz Riede

Abstract:

Elucidating the interplay between film morphology, photophysics, and device performance of bulk heterojunction (BHJ) organic photovoltaics remains challenging. Here, we use the well-defined morphology of vapor-deposited di-[4-(N,N-di-p-tolyl-amino)-phenyl]cyclohexane (TAPC):C60 blends to address charge generation and recombination by transient ultrafast spectroscopy. We gain relevant new insights to the functioning of dilute-donor (5% TAPC) fullerene-based BHJs compared to molecularly intermixed systems (50% TAPC). First, we show that intermolecular charge transfer (CT) excitons in the C60 clusters of dilute BHJs rapidly localize to Frenkel excitons prior to dissociating at the donor:acceptor interface. Thus, both Frenkel and CT excitons generate photocurrent over the entire fullerene absorption range. Second, we selectively monitor interfacial and bulk C60 clusters via their electro-absorption, demonstrating an energetic gradient that assists free charge generation. Third, we identify a fast (< 1 ns) recombination channel, whereby free electrons recombine with trapped holes on isolated TAPC molecules. This can harm the performance of dilute solar cells, unless the electrons are rapidly extracted in efficient devices.

Abstract:

© 2020 American Chemical Society. The real-time morphological evolution of vacuum-deposited α-sexithiophene (α-6T) on a weakly interacting (glass) substrate at ambient temperature is reported. In situ grazing-incidence small-angle X-ray scattering (GISAXS) enabled the observation of nanoscale aggregates, while in situ grazing-incidence wide-angle scattering (GIWAXS) allowed the study of the molecular-scale morphology. The in situ GISAXS measurements revealed that the α-6T growth proceeds via a Stranski-Krastanov mode, whereby 2-4 complete monolayers are deposited, followed by subsequent layers formed via island growth. In situ GIWAXS also showed the evolution of the polymorph composition during the thin-film growth. Initially, the disordered β-phase and the low-temperature (LT)-phase are deposited in nearly equal proportion until a thickness of 8 nm, whereby the LT-phase begins to dominate until a final α-6T thickness of 50 nm where the scattering intensity of the LT-phase is more than double that of the β-phase. The change in the polymorph composition coincided with an increase in the LT-phase d-spacing, indicating a lattice strain relief as the thin film moves from surface to bulk-mediated growth. The GISAXS findings were confirmed through direct imaging using ex situ atomic force microscopy (AFM) at various thicknesses, revealing the existence of both initial the initial and intermediate monolayers and final island morphologies. The findings reveal the real-time morphological evolution of α-6T across both the molecular scale and the nanoscale and highlight the role of strain in polymorph growth. Due to the importance of the thin-film microstructure in device performance, it is expected that these results will aid in the development of structure-property relationships necessary to realize the full potential of organic electronics.

Abstract:

This journal is © The Royal Society of Chemistry. The quenching of excitons in organic solar cells can play a significant role in limiting their power conversion efficiency (PCE). In this article, we investigate the effect of a thin layer of hexapropyltruxene inserted at the interface between the electron donor boron subphthalocyanine chloride (SubPc) and its underlying hole contact in planar heterojunction solar cells. We find that a 3.8 nm hexapropyltruxene interlayer between the molybdenum oxide (MoOx) hole contact and SubPc is sufficient to improve PCE in SubPc/C60 fullerene solar cells from 2.6% to 3.0%, a ∼20% performance improvement. While the absorption stays roughly the same, the comparison of external and internal quantum efficiencies reveals a significant increase in SubPc's contribution to the current for light with wavelengths between 520 and 600 nm. Microstructure and surface morphology assessed with in situ Grazing-Incidence Wide-Angle X-Ray Scattering (GIWAXS) and Atomic Force Microscopy (AFM), are evaluated alongside in situ spectroscopic ellipsometry, and photoluminescence measurements. The microstructural investigations demonstrate changes to the surface and bulk of SubPc grown atop a hexapropyltruxene interlayer indicating that the latter acts as a template layer in a similar way as MoOx. However, the improvement in PCE is found to be mainly via reduced exciton quenching at the MoOx contact with the insertion of the hexapropyltruxene layer.

Abstract:

Confining electric fields to a nanoscale region is challenging yet crucial for applications such as high resolution probing of electrical properties of materials and electric-field manipulation of nanoparticles. State-of-the-art techniques involving atomic force microscopy typically have a lateral resolution limit of tens of nanometers due to limitations in the probe geometry and stray electric fields that extend over space. Engineering the probes is the most direct approach to improving this resolution limit. However, current methods to fabricate high-resolution probes, which can effectively confine the electric fields laterally involve expensive and sophisticated probe manipulation, which has limited the use of this approach. Here, we demonstrate that nanoscale phase switching of configurable thin films on probes can result in high-resolution electrical probes. These configurable coatings can be both germanium-antimony-tellurium (GST) as well as amorphous-carbon, materials known to undergo electric field-induced non-volatile, yet reversible switching. By forming a localized conductive filament through phase transition, we demonstrate a spatial resolution of electrical field beyond the geometrical limitations of commercial platinum probes (i.e. an improvement of ~48%). We then utilize these confined electric fields to manipulate nanoparticles with single nanoparticle precision via dielectrophoresis. Our results advance the field of nanomanufacturing and metrology with direct applications for pick and place assembly at the nanoscale.