Prof Henry Snaith FRS

Abstract:

The past few years witnessed the rise of halide perovskites as prominent materials for a wide range of optoelectronic applications. However, oxide perovskites have a much longer history and are pivotal in many technological applications. As of today, a rational connection between these important materials is missing. Here, we explore this missing link and develop a novel concept of perovskite analogs, which led us to identify a new semiconductor, Ba₂AgIO₆. It exhibits an electronic band structure remarkably similar to that of our recently discovered halide double perovskite Cs₂AgInCl₆, but with a band gap in the visible range at 1.9 eV. We show that Ba₂AgIO₆ and Cs₂AgInCl₆ are analogs of the well-known transparent conductor BaSnO₃. We synthesize Ba₂AgIO₆ following a low-temperature solution process, and we perform crystallographic and optical characterizations. Ba₂AgIO₆ is a cubic oxide double perovskite with a direct low gap, opening new opportunities in perovskite-based electronics optoelectronics and energy applications.

Abstract:

Perovskite/silicon tandem solar cells are attractive for their potential for boosting cell efficiency beyond the crystalline silicon (Si) single-junction limit. However, the relatively large optical refractive index of Si, in comparison to that of transparent conducting oxides and perovskite absorber layers, results in significant reflection losses at the internal junction between the cells in monolithic (two-terminal) devices. Therefore, light management is crucial to improve photocurrent absorption in the Si bottom cell. Here it is shown that the infrared reflection losses in tandem cells processed on a flat silicon substrate can be significantly reduced by using an optical interlayer consisting of nanocrystalline silicon oxide. It is demonstrated that 110 nm thick interlayers with a refractive index of 2.6 (at 800 nm) result in 1.4 mA cm − ² current gain in the silicon bottom cell. Under AM1.5G irradiation, the champion 1 cm 2 perovskite/silicon monolithic tandem cell exhibits a top cell + bottom cell total current density of 38.7 mA cm −2 and a certified stabilized power conversion efficiency of 25.2%.