Prof Henry Snaith FRS

Abstract:

Interfacial materials tend to alter the crystallization, films growth and defect formation process of the as‐deposited perovskites, which has been a critical and fundamental factor in determining the efficiency and operational stability of perovskite‐based optoelectronic devices. This review explores the underlying mechanism of interfacial reactions, which can either result in degradations or be beneficial. The influence of interfacial reactions, mainly interface‐induced deprotonation of organic cations and amidation processes, are discussed in relation to their impact on perovskite film growth and ensuing optoelectronic device performance. It is further proposed strategies to regulate these reactions and mitigate their negative effects to achieve high performance optoelectronic devices.

Abstract:

Reducing heterointerface nonradiative recombination is a key challenge for realizing highly efficient perovskite solar cells (PSCs). Motivated by this, a facile strategy is developed via interfacial energetics reversal to functionalize perovskite heterointerface. A surfactant molecule, trichloro[3-(pentafluorophenyl)propyl]silane (TPFS) reverses perovskite surface energetics from intrinsic n-type to p-type, evidently demonstrated by ultraviolet and inverse photoelectron spectroscopies. The reconstructed perovskite surface energetics match well with the upper deposited hole transport layer, realizing an exquisite energy level alignment for accelerating hole extraction across the heterointerface. Meanwhile, TPFS further diminishes surface defect density. As a result, this cooperative strategy leads to greatly minimized nonradiative recombination. PSCs achieve an impressive power conversion efficiency of 25.9% with excellent reproducibility, and a nonradiative recombination-induced qV_oc loss of only 57 meV, which is the smallest reported to date in n-i-p structured PSCs.

Abstract:

<jats:title>Abstract</jats:title><jats:p>2D lead halide perovskites (2DPs) offer chemical compatibility with 3D perovskites and enhanced stability, which are attractive for applications in photovoltaic and light‐emitting devices. However, such lowered structural dimensionality causes increased excitonic effects and highly anisotropic charge‐carrier transport. Determining the diffusivity of excitations, in particular for out‐of‐plane or inter‐layer transport, is therefore crucial, yet challenging to achieve. Here, an effective method is demonstrated for monitoring inter‐layer diffusion of photoexcitations in (PEA)<jats:sub>2</jats:sub>PbI<jats:sub>4</jats:sub> thin films by tracking time‐dependent changes in photoluminescence spectra induced by photon reabsorption effects. Selective photoexcitation from either substrate‐ or air‐side of the films reveals differences in diffusion dynamics encountered through the film profile. Time‐dependent diffusion coefficients are extracted from spectral dynamics through a 1D diffusion model coupled with an interference correction for refractive index variations arising from the strong excitonic resonance of 2DPs. Such analysis, together with structural probes, shows that minute misalignment of 2DPs planes occurs at distances far from the substrate, where efficient in‐plane transport consequently overshadows the less efficient out‐of‐plane transport in the direction perpendicular to the substrate. Through detailed analysis, a low out‐of‐plane excitation diffusion coefficient of (0.26 ± 0.03) ×10<jats:sup>−4</jats:sup> cm<jats:sup>2</jats:sup> s<jats:sup>−1</jats:sup> is determined, consistent with a diffusion anisotropy of ≈4 orders of magnitude.</jats:p>