Prof Henry Snaith FRS

Abstract:

As perovskite photovoltaics stride towards commercialization, reverse bias degradation in shaded cells that must current match illuminated cells is a serious challenge. Previous research has emphasized the role of iodide and silver oxidation, and the role of hole tunnelling from the electron-transport layer into the perovskite to enable the flow of current under reverse bias in causing degradation. Here we show that device architecture engineering has a significant impact on the reverse bias behaviour of perovskite solar cells. By implementing both a ~35-nm-thick conjugated polymer hole transport layer and a more electrochemically stable back electrode, we demonstrate average breakdown voltages exceeding −15 V, comparable to those of silicon cells. Our strategy for increasing the breakdown voltage reduces the number of bypass diodes needed to protect a solar module that is partially shaded, which has been proven to be an effective strategy for silicon solar panels.

Abstract:

Lattice dynamics are critical to photovoltaic material performance, governing dynamic disorder, hot-carrier cooling, charge-carrier recombination, and transport. Soft metal-halide perovskites exhibit particularly intriguing dynamics, with Raman spectra exhibiting an unusually broad low-frequency response whose origin is still much debated. Here, we utilize ultra-low frequency Raman and infrared terahertz time-domain spectroscopies to provide a systematic examination of the vibrational response for a wide range of metal-halide semiconductors: FAPbI3, MAPbI x Br3–x , CsPbBr3, PbI2, Cs2AgBiBr6, Cu2AgBiI6, and AgI. We rule out extrinsic defects, octahedral tilting, cation lone pairs, and “liquid-like” Boson peaks as causes of the debated central Raman peak. Instead, we propose that the central Raman response results from an interplay of the significant broadening of Raman-active, low-energy phonon modes that are strongly amplified by a population component from Bose–Einstein statistics toward low frequency. These findings elucidate the complexities of light interactions with low-energy lattice vibrations in soft metal-halide semiconductors emerging for photovoltaic applications.

Abstract:

Perovskite solar cells (PSCs) with an "inverted" architecture are a key pathway for commercializing this emerging photovoltaic technology due to the better power conversion efficiency (PCE) and operational stability as compared to the "normal" device structure. Specifically, PCEs of the inverted PSCs have exceeded 25% owing to the development of improved self-assembled molecules (SAMs)^1-5 and passivation strategies^6-8. Nevertheless, poor wettability and agglomerations of SAMs^9-12 will cause interfacial losses, impeding further improvement in PCE and stability. Herein, we report on molecular hybrid at the buried interface in inverted PSCs by co-assembling a multiple carboxylic acid functionalized aromatic compound of 4,4',4''-nitrilotribenzoicacid (NA) with a popular SAM of [4-(3,6-dime-thyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) to improve the heterojunction interface. The molecular hybrid of Me-4PACz with NA could substantially improve the interfacial characteristics. The resulting inverted PSCs demonstrated a record-certified steady-state efficiency of 26.54%. Crucially, this strategy aligns seamlessly with large-scale manufacturing, achieving the highest certified PCE for inverted mini-modules at 22.74% (aperture area: 11.1 cm²). Our device also maintained 96.1% of its initial PCE after more than 2,400 hours of 1-sun operation in ambient air.

Abstract:

Further improvements in perovskite solar cells require better control of ionic defects in the perovskite photoactive layer during the manufacturing stage and their usage. Here we report a living passivation strategy using a hindered urea/thiocarbamate bond Lewis acid–base material (HUBLA), where dynamic covalent bonds with water and heat-activated characteristics can dynamically heal the perovskite to ensure device performance and stability. Upon exposure to moisture or heat, HUBLA generates new agents and further passivates defects in the perovskite. This passivation strategy achieved high-performance devices with a power conversion efficiency (PCE) of 25.1 per cent. HUBLA devices retained 94 per cent of their initial PCE for approximately 1,500 hours of ageing at 85 degrees Celsius in nitrogen and maintained 88 per cent of their initial PCE after 1,000 hours of ageing at 85 degrees Celsius and 30 per cent relative humidity in air.