Prof Henry Snaith FRS

Abstract:

Perovskite solar cells have shown phenomenal progress and have great potential to be manufactured as low‐cost large area modules. However, perovskite films often suffer from pinholes and the resulting contact between hole‐ and electron transporting layers provides lower resistance (shunt) pathways, leading to decreased open‐circuit voltage and fill factor. This problem is even more severe in large area cells and especially in the case of neutral color semitransparent cells, where a large absorber‐free area is required to provide the desired transparency. Herein, a simple, inexpensive, and scalable wet chemical method is presented to block these “shunting paths” via deposition of transparent, insulating molecular layers, which preferentially bind to the uncovered surface of the electron collecting oxide, without hindering charge extraction from the perovskite to the charge collection layers. It is shown that this method improves the performance in semitransparent cells, where the enhancement in open‐circuit voltage is up to 30% without negatively impacting the photocurrent. Using this method, we achieved an efficiency of 6.1% for a neutral color semitransparent perovskite cell with 38% average visible transmittance. This simple shunt blocking technique has applications in improving the yield as well as efficiency of large area perovskite solar cells and light emitting devices.

Abstract:

The family of organic–inorganic halide perovskite materials has generated tremendous interest in the field of photovoltaics due to their high power conversion efficiencies. There has been intensive development of cells based on the archetypal methylammonium (MA) and recently introduced formamidinium (FA) materials, however, there is still considerable controversy over their fundamental electronic properties. Two of the most important parameters are the binding energy of the exciton (R*) and its reduced effective mass μ. Here we present extensive magneto optical studies of Cl assisted grown MAPbI3 as well as MAPbBr3 and the FA based materials FAPbI3 and FAPbBr3. We fit the excitonic states as a hydrogenic atom in magnetic field and the Landau levels for free carriers to give R* and μ. The values of the exciton binding energy are in the range 14–25 meV in the low temperature phase and fall considerably at higher temperatures for the tri-iodides, consistent with free carrier behaviour in all devices made from these materials. Both R* and μ increase approximately proportionally to the band gap, and the mass values, 0.09–0.117m0, are consistent with a simple k.p perturbation approach to the band structure which can be generalized to predict values for the effective mass and binding energy for other members of this perovskite family of materials.