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CMP
Credit: Jack Hobhouse

Prof Henry Snaith FRS

Professor of Physics

Sub department

  • Condensed Matter Physics

Research groups

  • Snaith group
  • Advanced Device Concepts for Next-Generation Photovoltaics
Henry.Snaith@physics.ox.ac.uk
Robert Hooke Building, room G21
  • About
  • Publications

Perovskites for next-generation colour conversion displays

Nature Electronics Springer Nature (2025) 1-9

Authors:

Jihun Kim, Eui Dae Jung, Jeonghwan You, Jeongjae Lee, Bum Chan Park, Henry J Snaith, Richard H Friend, Changsoon Cho, Bo Ram Lee

Abstract:

Metal halide perovskites could form the basis of future display technology due to their powerful optical properties. However, the commercialization of electroluminescent perovskites has been hindered by key challenges, including limited operational lifetime and instability in blue emission. Here we highlight the potential of perovskites in colour conversion displays. We examine the particular advantages of perovskite materials as colour conversion layers: narrow emission spectrum, high absorption coefficients, high-brightness operation, photon recycling and ease of manufacturing. We provide a framework for the development of RoHS (Restriction of Hazardous Substances)-compliant and colour-filter-free perovskite-based colour conversion displays and offer guidelines for commercialization. We also explore the potential of using perovskite colour conversion layers to create advanced augmented reality and virtual reality technologies.
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Optically Determined Hole Effective Mass in Tin-Iodide Perovskite Films

ACS Energy Letters American Chemical Society (ACS) (2025) 4589-4595

Authors:

Vincent J-Y Lim, Marcello Righetto, Michael D Farrar, Thomas Siday, Henry J Snaith, Michael B Johnston, Laura M Herz

Abstract:

Tin-halide perovskites currently offer the best photovoltaic performance of lead-free metal-halide semiconductors. However, their transport properties are mostly dominated by holes, owing to ubiquitous self-doping. Here we demonstrate a noncontact, optical spectroscopic method to determine the effective mass of the dominant hole species in FASnI3, by investigating a series of thin films with hole densities finely tuned through either SnF2 additive concentration or controlled exposure to air. We accurately determine the plasma frequency from mid-infrared reflectance spectra by modeling changes in the vibrational response of the FA cation as the plasma edge shifts through the molecular resonance. Our approach yields a hole effective mass of 0.28m e for FASnI3 and demonstrates parabolicity within ∼100 meV of the valence band edge. An absence of Fano contributions further highlights insignificant coupling between the hole plasma and FA cation. Overall, this approach enables noncontact screening of thin-film materials for optimized charge-carrier transport properties.
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Accessing Metal‐Containing Species in Tin–Lead Perovskite Precursor Solutions via Molecular Strategies Guided by the Hard–Soft Acid–Base Principle

Angewandte Chemie International Edition Wiley (2025) e202514010

Authors:

Shuaifeng Hu, Xinru Sun, Wentao Liu, Luca Gregori, Pei Zhao, Jorge Pascual, André Dallmann, Akash Dasgupta, Fengjiu Yang, Guixiang Li, Mahmoud Aldamasy, Silver‐Hamill Turren‐Cruz, Marion A Flatken, Sheng Fu, Yasuko Iwasaki, Richard Murdey, Armin Hoell, Susan Schorr, Steve Albrecht, Shangfeng Yang, Antonio Abate, Atsushi Wakamiya, Filippo De Angelis, Meng Li, Henry J Snaith

Abstract:

The properties of metal‐centred species in metal halide perovskite precursor solutions substantially influence the formation and evolution of colloidal particles, which in turn dictate the crystallisation process and the film quality. In this work, we assess the “hard” and “soft” Lewis acid characteristics of Sn2+ and Pb2+ cations as a strategy to modulate the chemical environment of these metal‐containing species in mixed‐metal tin–lead perovskite precursor solutions. We observe enhanced simultaneous access to both metal centres upon adding compounds with functional groups suggested by the hard–soft acid–base principle. Theoretical calculations suggest that the hard base carboxyl group preferentially interacts with Sn2+‐based species, while the softer base thiol group also targets Pb2+‐based species. By effectively accessing and manipulating possible classes of inorganic species and their colloidal particle properties in the precursor solutions, we achieve 1.26 eV perovskite polycrystalline films exhibiting enhanced structural and optoelectronic quality, giving the best quasi‐Fermi level splitting values of up to 0.95 eV. As a result, the solar cell devices demonstrate efficiency values of up to 23.3% with an extended operational lifetime, retaining 80% of their initial efficiency after over 280 and 180 h of maximum power point tracking under simulated AM1.5G illumination at 25 and 65 °C, respectively.
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Approaching the radiative limits for wide bandgap perovskite solar cells using fullerene blend electron transport interlayers †

EES Solar Royal Society of Chemistry (2025)

Authors:

Josephine L Surel, Pietro Caprioglio, Joel A Smith, Akash Dasgupta, Francesco Furlan, Charlie Henderson, Fengning Yang, Benjamin M Gallant, Seongrok Seo, Alexander Knight, Manuel Kober-Czerny, Joel Luke, David P McMeekin, Alexander I Tartakovskii, Ji-Seon Kim, Nicola Gasparini, Henry J Snaith

Abstract:

Performance losses in positive–intrinsic–negative architecture perovskite solar cells are dominated by nonradiative recombination at the perovskite/organic electron transport layer interface, which is particularly problematic for wider bandgap perovskites. Large endeavours have been dedicated to the replacement of fullerenes, which are the most commonly used class of electron transport layers, with limited success thus far. In this work, we demonstrate blending the fullerene derivatives [6,6]-phenyl C61 butyric acid methyl ester (PCBM) and indene-C60 bis-adduct (ICBA) as a thin interlayer between 1.77 eV bandgap perovskite and an evaporated C60 layer. By tuning the fullerene blend to a trace 2% by mass of PCBM in ICBA, we remarkably form an interlayer which features improved energetic alignment with the perovskite and the PCBM : ICBA fullerene mixture, together with a stronger molecular ordering and an order of magnitude higher electron mobility than either neat PCBM or ICBA. Additional molecular surface passivation approaches are found to be beneficial in conjunction with this approach, resulting in devices with 19.5% steady state efficiency, a fill factor of 0.85 and an open-circuit voltage of 1.33 V, which is within 10% of the radiative limit of the latter two device parameters for this bandgap. This work highlights the complex nonlinear energetic behaviour with fullerene mixing, and how control of the energetics and crystallinity of these materials is crucial in overcoming the detrimental recombination losses that have historically limited perovskite solar cells.
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Impact of Charge Transport Layers on the Structural and Optoelectronic Properties of Coevaporated Cu 2 AgBiI 6

ACS Applied Materials & Interfaces American Chemical Society 17:28 (2025) 40363-40374

Authors:

Jae Eun Lee, Marcello Righetto, Benjamin WJ Putland, Siyu Yan, Joshua RS Lilly, Snigdha Lal, Heon Jin, Nakita K Noel, Michael B Johnston, Henry J Snaith, Laura M Herz

Abstract:

The copper–silver–bismuth–iodide compound Cu2AgBiI6 has emerged as a promising lead-free and environmentally friendly alternative to wide-bandgap lead-halide perovskites for applications in multijunction solar cells. Despite its promising optoelectronic properties, the efficiency of Cu2AgBiI6 is still severely limited by poor charge collection. Here, we investigate the impact of commonly used charge transport layers (CTLs), including poly­[bis­(4-phenyl)­(2,4,6-trimethylphenyl)­amine] (PTAA), CuI, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and SnO2, on the structural and optoelectronic properties of coevaporated Cu2AgBiI6 thin films. We reveal that while organic transport layers, such as PTAA and PCBM, form a relatively benign interface, inorganic transport layers, such as CuI and SnO2, induce the formation of unintended impurity phases within the CuI–AgI–BiI3 solid solution space, significantly influencing structural and optoelectronic properties. We demonstrate that identification of these impurity phases requires careful cross-validation combining absorption, X-ray diffraction and THz photoconductivity spectroscopy because their structural and optoelectronic properties are very similar to those of Cu2AgBiI6. Our findings highlight the critical role of CTLs in determining the structural and optoelectronic properties of coevaporated copper–silver–bismuth–iodide thin films and underscore the need for advanced interface engineering to optimize device efficiency and reproducibility.
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