Utilizing vertically aligned CdSe/CdS nanorods within a luminescent solar concentrator
Applied Physics Letters AIP Publishing 106:4 (2015) 041110
Dip-pen patterning of poly(9,9-dioctylfluorene) chain-conformation-based nano-photonic elements
Nature Communications Springer Nature 6 (2015) 1-9
Abstract:
Metamaterials are a promising new class of materials, in which sub-wavelength physical structures, rather than variations in chemical composition, can be used to modify the nature of their interaction with electromagnetic radiation. Here we show that a metamaterials approach, using a discrete physical geometry (conformation) of the segments of a polymer chain as the vector for a substantial refractive index change, can be used to enable visible wavelength, conjugated polymer photonic elements. In particular, we demonstrate that a novel form of dip-pen nanolithography provides an effective means to pattern the so-called β-phase conformation in poly(9,9-dioctylfluorene) thin films. This can be done on length scales ≤500 nm, as required to fabricate a variety of such elements, two of which are theoretically modelled using complex photonic dispersion calculations.Interplay between solid state microstructure and photophysics for poly(9,9‐dioctylfluorene) within oriented polyethylene hosts
Journal of Polymer Science Part B Polymer Physics Wiley 53:1 (2015) 22-38
High‐efficiency, solution‐processed, multilayer phosphorescent organic light‐emitting diodes with a copper thiocyanate hole‐injection/hole‐transport layer
Advanced Materials Wiley 27:1 (2014) 93-100
Abstract:
Copper thiocyanate (CuSCN) is introduced as a hole‐injection/hole‐transport layer (HIL/HTL) for solution‐processed organic light‐emitting diodes (OLEDs). The OLED devices reported here with CuSCN as HIL/HTL perform significantly better than equivalent devices fabricated with a PEDOT:PSS HIL/HTL, and solution‐processed, phosphorescent, small‐molecule, green OLEDs with maximum luminance ≥10 000 cd m‐2, maximum luminous efficiency ≤50 cd A‐1, and maximum luminous power efficiency ≤55 lm W‐1 are demonstrated.
High-speed scanning thermal lithography for nanostructuring of electronic devices.
Nanoscale 6:11 (2014) 5813-5819