Intense terahertz generation based on the photo-dember effect

Optics InfoBase Conference Papers (2010)

Authors:

G Klatt, F Hilser, W Chao, R Gebs, A Bartels, K Huska, U Lemmer, G Bastian, MB Johnston, M Fischer, J Faist, T Dekorsy

Abstract:

We demonstrate a new scheme for generating THz radiation based on the photo-Dember effect in lateral geometry. By micro-structuring a semiconductor surface we achieve strongly enhanced THz emission comparable to high-efficiency externally biased photoconductive emitters. © 2010 Optical Society of America.

The role of ultrafast torsional relaxation in the emission from polythiophene aggregates

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (2010) 117-118

Authors:

P Parkinson, C Müller, N Stingelin, MB Johnston, LM Herz

Abstract:

An understanding of aggregation effects in organic semiconductors is essential for their effective use in optoelectronic devices. Typically, the electronic dynamics in such systems are heavily dependant upon the aggregation state, and dynamics often occur on sub-nanosecond timescales. © 2010 IEEE.

Improved performance of GaAs-based terahertz emitters

Irmmw Thz 2010 35th International Conference on Infrared Millimeter and Terahertz Waves Conference Guide (2010)

Authors:

C Headley, L Fu, P Parkinson, X Xu, J Lloyd-Hughes, C Jagadish, MB Johnston

Abstract:

We have improved the stability and performance of terahertz photoconductive (Auston) switches using a combination of (NH4)2S surface passivation and silicon nitride (Si3N4) encapsulation. The passivation and encapsulation processes increased the average terahertz power generated four-fold.

Intense terahertz generation based on the photo-Dember effect

Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 (2010)

Authors:

G Klatt, F Hilser, W Chao, R Gebs, A Bartels, K Huska, U Lemmer, G Bastian, MB Johnston, M Fischer, J Faist, T Dekorsy

Abstract:

We demonstrate a new scheme for generating THz radiation based on the photo-Dember effect in lateral geometry. By micro-structuring a semiconductor surface we achieve strongly enhanced THz emission comparable to high-efficiency externally biased photoconductive emitters. © 2010 Optical Society of America.

Terahertz emission from lateral photo-Dember currents

Optics Express 18:5 (2010) 4939-4947

Authors:

G Klatt, F Hilser, W Qiao, M Beck, R Gebs, A Bartels, K Huska, U Lemmer, G Bastian, MB Johnston, M Fischer, J Faist, T Dekorsy

Abstract:

The photo-Dember effect is a source of impulsive THz emission following femtosecond pulsed optical excitation. This emission results from the ultrafast spatial separation of electron-hole pairs in strong carrier gradients due to their different diffusion coefficients. The associated time dependent polarization is oriented perpendicular to the excited surface which is inaptly for efficient out coupling of THz radiation. We propose a scheme for generating strong carrier gradients parallel to the excited surface. The resulting photo-Dember currents are oriented in the same direction and emit THz radiation into the favorable direction perpendicular to the surface. This effect is demonstrated for GaAs and In0.53Ga0.47As. Surprisingly the photo-Dember THz emitters provide higher bandwidth than photoconductive emitters. Multiplexing of phase coherent photo-Dember currents by periodically tailoring the photoexcited spatial carrier distribution gives rise to a strongly enhanced THz emission, which reaches electric field amplitudes comparable to a high-efficiency externally biased photoconductive emitter. © 2010 Optical Society of America.