THz spectroscopy and deviation from Drude model of LT-GaAs thin films with sub-picosecond charge-carrier lifetime.
Faraday Discussions Royal Society of Chemistry (RSC) (2026)
Abstract:
High-performance ultrafast terahertz devices such as modulators, photoconductive emitters, and detectors rely on an ultrafast change in conductivity. Semiconductors are suitable for this purpose since their charge-carrier density can be varied by external factors, such as incident photons or an applied electrical potential. High-performance ultrafast terahertz devices require semiconductors with high charge-carrier mobility but low charge-carrier lifetimes. The trade-off between charge-carrier mobility and the short charge-carrier lifetimes of standard semiconductors limits the signal-to-noise ratio of current terahertz devices. Hence, it is essential to develop high-performance materials to overcome these limitations and enable ultrafast terahertz technology. Low-temperature GaAs (LT-GaAs) has shown excellent performance in overcoming this limitation by providing a high charge-carrier mobility and, at the same time, a low charge-carrier lifetime. In this study, we have conducted terahertz time-domain spectroscopy (THz-TDS) and terahertz optical-pump terahertz-probe spectroscopy (OPTPS) on 2 µm-thick LT-GaAs thin films bonded with benzocyclobutene (BCB) to sapphire substrates. With these techniques, we demonstrate excellent sub-picosecond charge-carrier lifetimes across different infrared pump beam fluences. The measured samples showed a charge-carrier lifetime in LT-GaAs of 0.46 ps. We discuss observed saturation effects and how they can influence the shape of the photoconductivity spectrum. We explain the origin of this effect in the context of the experimental technique and charge-carrier dynamics in the material.Overcoming Charge-Carrier Localization in Metal Chalcohalides
Journal of the American Chemical Society American Chemical Society (ACS) (2026)
Abstract:
Effective charge-carrier transport is a key requirement of next-generation thin-film materials developed for solar cells. Perovskite-inspired materials (PIMs), including metal chalcohalides, show great promise as lead-free solar absorbers. However, intrinsic charge-carrier localization processes have frequently been reported to severely limit their transport properties. Recent research has thus focused on developing a rational understanding of this localization process and identifying strategies to eliminate it. Mixed-metal chalcohalides (A2BCh2X3) may offer promising solutions, combining enhanced chemical stability with promising optoelectronic properties. Here, we demonstrate how charge-carrier localization can be overcome through judicious chemical substitution in this family of materials. Upon changing the M(II) cation on the A-site, the lattice symmetry shifts from the lower-symmetry monoclinic P21/c phase in Pb2SbS2I3 to the higher-symmetry orthorhombic Cmcm phase in Sn2SbS2I3. Crucially, a rapid localization of charge carriers within the first few picoseconds of their generation is observed only for Pb2SbS2I3, whereas Sn2SbS2I3 maintains a longer-lived nanosecond photoconductivity. We attribute this observation to the higher electronic dimensionality of the Cmcm Sn2SbS2I3 structure, whose more symmetric lattice suppresses the charge-carrier localization dominating in the lower-dimensional P21/c Pb-analogue. These findings establish a direct link between structural and optoelectronic properties in metal chalcohalides, demonstrating how facile chemical tuning can be harnessed to overcome charge-carrier localization in PIM absorbers for solar energy harvesting.Bias-free photoelectrochemical co-production of formate from CO2 and biomass-derived plastic precursors
Communications Materials Springer Science and Business Media LLC 7:1 (2026) 136
Abstract:
Tracking the Breakdown of Quantum Confinement during Structural Degradation of FAPbI 3
The Journal of Physical Chemistry Letters American Chemical Society 17:23 (2026) 6566-6573
Abstract:
Bulk formamidinium lead triiodide (FAPbI3) films host spontaneously formed quantum-confined (QC) domains, but their structural origin remains unclear. Using controlled material degradation in humid air as a dynamic lattice perturbation, we track the evolution of QC features in thin-film absorption of FAPbI3. With aging, above-bandgap QC features redshift and diminish, indicating weakened electronic confinement. Concurrently, X-ray diffraction reveals that breakdown of α-phase connectivity coincides with the loss of short-range higher-order hexagonal (nH, n > 2) polytypes as the material converts to the 2H δ-phase. Such polytypic nanodomains may generate peaked absorption features by forming higher-energy barriers confining charge carriers within α-FAPbI3 or by introducing distinct electronic states associated with mixed octahedral connectivity. Progressive degradation dismantles this framework, causing the disappearance of the QC features. Our results identify the structural motifs underpinning QC effects and propose that controlling higher-order (n > 2) hexagonal polytypes offers a route to tuning quantum confinement in FAPbI3 films.Odd–Even Cation Engineering of the Excitation Transport Anisotropy in Two-Dimensional Perovskite Films
ACS Nano American Chemical Society (ACS) (2026)