Generative and multimodal AI for materials prediction and design: progress, challenges, and perspectives
Jphys Materials 9:3 (2026)
Abstract:
Artificial intelligence (AI) is accelerating materials prediction and design by enabling efficient exploration of chemical and structural spaces, with particular promise for novel materials discovery. However, novelty in materials discovery encompasses chemical plausibility, structural distinctiveness, property relevance and experimental realisability, making AI-driven novelty claims difficult to substantiate. We introduce a materials property hierarchy, from intrinsic, composition-determined properties to extrinsic, processing-dependent performance, to clarify deployment constraints and distinguish structural, physical and deployment novelty. This framework motivates an evidence-based view of multimodal materials data spanning chemical composition, microstructure, processing, and testing and characterisation, showing that current evidence remains concentrated in composition and idealised structure while heterogeneous, under-represented and weakly integrated modalities limit support for physical and deployment novelty. It also highlights the limitations of benchmarks based mainly on computational labels and proxy novelty criteria. Community-wide standards for data collection, modality alignment and evidence synthesis are needed to support multimodal data construction, process-aware multimodal modelling, feasibility-first generative modelling and deployment-aware benchmarking, so that generative and multimodal AI can design experimentally realisable materials with defensible scientific and practical novelty.Facile electrophoretic deposition of diverse functional materials for scalable electrode and photoelectrode fabrication.
RSC advances (2026)
Abstract:
Electrophoretic deposition (EPD) offers a scalable, solution-processable and binder-free route for assembling functional electrode films, yet its applicability across chemically diverse materials remains largely unexplored. In this study, we present a facile EPD platform for the rapid fabrication of electrodes and photoelectrodes from more than 20 functional materials, including carbon nanostructures, polymeric semiconductors, metal oxides, chalcogenides, nitrides, porous metal-organic frameworks, covalent organic frameworks and hybrid composites. Optimised deposition recipes are established for each material by controlling suspension chemistry, charging agents, applied voltage and deposition time. For photoactive materials, the photocurrent response is used as a practical descriptor to evaluate film quality and guide loading optimisation. Structural characterisation by scanning electron microscopy and transmission electron microscopy confirms uniform coatings, controlled morphologies, and intimate contact between deposited materials and conductive substrates. The versatility of the method is further validated by conformal deposition on both indium tin oxide (ITO) and porous carbon paper substrates, highlighting its compatibility with diverse electrode architectures. We also clarify the role of iodine and citric acid as charging agents for stabilising suspensions and ensuring reproducible deposition. Overall, this work demonstrates EPD as a versatile and scalable approach for integrating a wide range of functional materials into binder-free electrodes for photoelectrochemical and catalytic applications.THz spectroscopy and deviation from Drude model of LT-GaAs thin films with sub-picosecond charge-carrier lifetime.
Faraday Discussions Royal Society of Chemistry (RSC) (2026)
Abstract:
High-performance ultrafast terahertz devices such as modulators, photoconductive emitters, and detectors rely on an ultrafast change in conductivity. Semiconductors are suitable for this purpose since their charge-carrier density can be varied by external factors, such as incident photons or an applied electrical potential. High-performance ultrafast terahertz devices require semiconductors with high charge-carrier mobility but low charge-carrier lifetimes. The trade-off between charge-carrier mobility and the short charge-carrier lifetimes of standard semiconductors limits the signal-to-noise ratio of current terahertz devices. Hence, it is essential to develop high-performance materials to overcome these limitations and enable ultrafast terahertz technology. Low-temperature GaAs (LT-GaAs) has shown excellent performance in overcoming this limitation by providing a high charge-carrier mobility and, at the same time, a low charge-carrier lifetime. In this study, we have conducted terahertz time-domain spectroscopy (THz-TDS) and terahertz optical-pump terahertz-probe spectroscopy (OPTPS) on 2 µm-thick LT-GaAs thin films bonded with benzocyclobutene (BCB) to sapphire substrates. With these techniques, we demonstrate excellent sub-picosecond charge-carrier lifetimes across different infrared pump beam fluences. The measured samples showed a charge-carrier lifetime in LT-GaAs of 0.46 ps. We discuss observed saturation effects and how they can influence the shape of the photoconductivity spectrum. We explain the origin of this effect in the context of the experimental technique and charge-carrier dynamics in the material.Overcoming Charge-Carrier Localization in Metal Chalcohalides
Journal of the American Chemical Society American Chemical Society (ACS) (2026)
Abstract:
Effective charge-carrier transport is a key requirement of next-generation thin-film materials developed for solar cells. Perovskite-inspired materials (PIMs), including metal chalcohalides, show great promise as lead-free solar absorbers. However, intrinsic charge-carrier localization processes have frequently been reported to severely limit their transport properties. Recent research has thus focused on developing a rational understanding of this localization process and identifying strategies to eliminate it. Mixed-metal chalcohalides (A2BCh2X3) may offer promising solutions, combining enhanced chemical stability with promising optoelectronic properties. Here, we demonstrate how charge-carrier localization can be overcome through judicious chemical substitution in this family of materials. Upon changing the M(II) cation on the A-site, the lattice symmetry shifts from the lower-symmetry monoclinic P21/c phase in Pb2SbS2I3 to the higher-symmetry orthorhombic Cmcm phase in Sn2SbS2I3. Crucially, a rapid localization of charge carriers within the first few picoseconds of their generation is observed only for Pb2SbS2I3, whereas Sn2SbS2I3 maintains a longer-lived nanosecond photoconductivity. We attribute this observation to the higher electronic dimensionality of the Cmcm Sn2SbS2I3 structure, whose more symmetric lattice suppresses the charge-carrier localization dominating in the lower-dimensional P21/c Pb-analogue. These findings establish a direct link between structural and optoelectronic properties in metal chalcohalides, demonstrating how facile chemical tuning can be harnessed to overcome charge-carrier localization in PIM absorbers for solar energy harvesting.Bias-free photoelectrochemical co-production of formate from CO2 and biomass-derived plastic precursors
Communications Materials Springer Science and Business Media LLC 7:1 (2026) 136