Akash Dasgupta

Abstract:

In this work we demonstrate that time-resolved photoluminescence data of metal halide perovskites can be effectively evaluated by combining Bayesian inference with a Markov-Chain Monte-Carlo algorithm and a physical model. This approach enables us to infer a high number of parameters which govern the performance of metal halide perovskite-based devices, alongside the probability distributions of those parameters, as well as correlations among all parameters. Via studying a set of "half-stacks’‘, comprising electron and hole transport materials contacting perovskite thin-films, we determine surface recombination velocities at these interfaces with high precision. From the probability distributions of all inferred parameters, we can simulate intensity-dependent photoluminescence quantum efficiency and compare it to the experimental data. Finally, we estimate mobility values for the "vertical’’ charge carrier transport, that perpendicular to the plane of the substrate, for all samples using our approach. Since this mobility estimation is derived from charge carrier diffusion over the length-scale of the film thickness and in the vertical direction, it is highly relevant to transport in photovoltaic and light emitting devices. Our approach of coupling spectroscopic measurements with advanced, computational analysis will help speed up scientific research in the field of optoelectronic materials and devices and exemplifies how carefully constructed computational algorithms can derive valuable plurality of information from simple datasets. We expect that our approach will be expandable to a variety of other analysis techniques and that our method will be applicable to other semiconductors.

Abstract:

Abstract:

All data reported in publication: Impact of precursor dosing on the surface passivation of AZO/AlOx stacks formed using atomic layer deposition

Abstract:

Multijunction photovoltaics (PVs) are gaining prominence owing to their superior capability of achieving power conversion efficiencies (PCEs) beyond the radiative limit of single-junction cells^1-8, where improving narrow bandgap tin-lead perovskites is critical for thin-film devices⁹. With a focus on understanding the chemistry of tin-lead perovskite precursor solutions, we herein find that Sn(II) species dominate interactions with precursors and additives and uncover the exclusive role of carboxylic acid in regulating solution colloidal properties and film crystallisation, and ammonium in improving film optoelectronic properties. Materials that combine these two function groups, amino acid salts, considerably improve the semiconducting quality and homogeneity of perovskite films, surpassing the effect of the individual functional groups when introduced as part of separate molecules. Our enhanced tin-lead perovskite layer allows us to fabricate solar cells with PCEs of 23.9, 29.7 (certified 29.26%), and 28.7% for single-, double-, and triple-junction devices, respectively. Our 1-cm² triple-junction devices show PCEs of 28.4% (certified 27.28%). Encapsulated triple-junction cells maintain 80% of their initial efficiencies after 860 h maximum power point tracking in ambient. We further fabricate quadruple-junction devices and obtain PCEs of 27.9% with the highest open-circuit voltage of 4.94 V. This work establishes a new benchmark for multijunction PVs.

Abstract:

It is widely accepted that mobile ions are responsible for the slow electronic responses observed in metal halide perovskite-based optoelectronic devices, and strongly influence long-term operational stability. Electrical characterisation methods mostly observe complex indirect effects of ions on bulk/interface recombination, struggle to quantify the ion density and mobility, and are typically not able to fully quantify the influence of the ions upon the bulk and interfacial electric fields. We analyse the bias-assisted charge extraction (BACE) method for the case of a screened bulk electric field, and introduce a new characterisation method based on BACE, termed ion drift BACE. We reveal that the initial current density and current decay dynamics depend on the ion conductivity, which is the product of ion density and mobility. This means that for an unknown high ion density, typical in perovskite solar absorber layers, the mobility cannot be directly obtained from BACE measurements. We derive an analytical model to illustrate the relation between current density, conductivity and bulk field screening, supported by drift–diffusion simulations. By measuring the ion density independently with impedance spectroscopy, we show how the ion mobility can be derived from the BACE ion conductivity. We highlight important differences between the low- and high-ion density cases, which reveal whether the bulk electric field is fully screened or not. Our work clarifies the complex ion-related processes occurring within perovskite solar cells and gives new insight into the operational principles of halide perovskite devices as mixed ionic–electronic conductors.