Thermodynamic and magnetic properties of the layered triangular magnet NaNiO2
Physica B Condensed Matter 374-375 (2006) 47-50
Abstract:
We report muon-spin rotation, heat capacity, magnetization, and AC magnetic susceptibility measurements of the magnetic properties of the layered spin-1/2 antiferromagnet NaNiOEffect of SnO2 coating on the magnetic properties of nanocrystalline CuFe2O4
Solid State Communications 137:9 (2006) 512-516
Abstract:
Nanocrystalline CuFeMagnetization of La2-x Srx Ni O4+δ (0≤x≤0.5): Spin-glass and memory effects
Physical Review B - Condensed Matter and Materials Physics 73:1 (2006)
Abstract:
We have studied the magnetization of a series of spin-charge-ordered La2-x Srx Ni O4+δ single crystals with 0≤x≤0.5. For fields applied parallel to the ab plane there is a large irreversibility below a temperature TF1 ∼50 K and a smaller irreversibility that persists up to near the charge-ordering temperature. We observed memory effects in the thermoremnant magnetization across the entire doping range. We found that these materials retain a memory of the temperature at which an external field was removed and that there is a pronounced increase in the thermoremnant magnetization when the system is warmed through a spin reorientation transition. © 2006 The American Physical Society.Oxide muonics: I. Modelling the electrical activity of hydrogen in semiconducting oxides
Journal of Physics Condensed Matter 18:3 (2006) 1061-1078
Abstract:
A shallow-to-deep instability of hydrogen defect centres in narrow-gap oxide semiconductors is revealed by a study of the electronic structure and electrical activity of their muonium counterparts, a methodology that we term 'muonics'. In CdO, Ag2O and Cu2O, paramagnetic muonium centres show varying degrees of delocalization of the singly occupied orbital, their hyperfine constants spanning 4 orders of magnitude. PbO and RuO 2, on the other hand, show only electronically diamagnetic muon states, mimicking those of interstitial protons. Muonium in CdO shows shallow-donor behaviour, dissociating between 50 and 150 K; the effective ionization energy of 0.1 eV is at some variance with the effective-mass model but illustrates the possibility of hydrogen doping, inducing n-type conductivity as in the wider-gap oxide, ZnO. For Ag2O, the principal donor level is deeper (0.25 eV) but ionization is nonetheless complete by room temperature. Striking examples of level-crossing and RF resonance spectroscopy reveal a more complex interplay of several metastable states in this case. In Cu2O, muonium has quasi-atomic character and is stable to 600 K, although the electron orbital is substantially more delocalized than in the trapped-atom states known in certain wide-gap dielectric oxides. Its eventual disappearance towards 900 K, with an effective ionization energy of 1 eV, defines an electrically active level near mid-gap in this material. © 2006 IOP Publishing Ltd.On the ordering of Na+ ions in NaxCoO2
AIP CONF PROC 850 (2006) 1213-1214