Charge-carrier dynamics of solution-processed antimony- and bismuth-based chalcogenide thin films
ACS Energy Letters American Chemical Society 8:3 (2023) 1485-1492
Abstract:
Chalcogenide-based semiconductors have recently emerged as promising candidates for optoelectronic devices, benefiting from their low-cost, solution processability, excellent stability and tunable optoelectronic properties. However, the understanding of their fundamental optoelectronic properties is far behind the success of device performance and starts to limit their further development. To fill this gap, we conduct a comparative study of chalcogenide absorbers across a wide material space, in order to assess their suitability for different types of applications. We utilize optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity techniques to fully analyze their charge-carrier dynamics. We show that antimony-based chalcogenide thin films exhibit relatively low charge-carrier mobilities and short lifetimes, compared with bismuth-based chalcogenides. In particular, AgBiS2 thin films possess the highest mobility, and Sb2S3 thin films have less energetic disorder, which are beneficial for photovoltaic devices. On the contrary, Bi2S3 showed ultralong carrier lifetime and high photoconductive gain, which is beneficial for designing photoconductors.Optimised Spintronic Emitters of Terahertz Radiation for Time-Domain Spectroscopy
Journal of Infrared, Millimeter and Terahertz Waves Springer 44:1-2 (2023) 52-65
Abstract:
AbstractSpintronic metal thin films excited by femtosecond laser pulses have recently emerged as excellent broadband sources of terahertz (THz) radiation. Unfortunately, these emitters transmit a significant proportion of the incident excitation laser, which causes two issues: first, the transmitted light can interfere with measurements and so must be attenuated; second, the transmitted light is effectively wasted as it does not drive further THz generation. Here, we address both issues with the inclusion of a high-reflectivity (HR) coating made from alternating layers of SiO2 and Ta2O5. Emitters with the HR coating transmit less than 0.1% of the incident excitation pulse. Additionally, we find that the HR coating increases the peak THz signal by roughly 35%, whereas alternative attenuating elements, such as cellulose nitrate films, reduce the THz signal. To further improve the emission, we study the inclusion of an anti-reflective coating to the HR-coated emitters and find the peak THz signal is enhanced by a further 4%.Coated Spintronic Emitters for Improved THz Time-domain Spectroscopy
Institute of Electrical and Electronics Engineers (IEEE) 00 (2023) 1-2
Nanowire-based THz polarimetry
Institute of Electrical and Electronics Engineers (IEEE) 00 (2023) 1-2
Nanowires in Terahertz Photonics: Harder, Better, Stronger, Faster
Institute of Electrical and Electronics Engineers (IEEE) 00 (2023) 1-1