Prof Michael Johnston

Abstract:

Metal halide perovskite photovoltaic cells could potentially boost the efficiency of commercial silicon photovoltaic modules from ∼20 toward 30% when used in tandem architectures. An optimum perovskite cell optical band gap of ~1.75 electron volts (eV) can be achieved by varying halide composition, but to date, such materials have had poor photostability and thermal stability. Here we present a highly crystalline and compositionally photostable material, [HC(NH2)2](0.83)Cs(0.17)Pb(I(0.6)Br(0.4))3, with an optical band gap of ~1.74 eV, and we fabricated perovskite cells that reached open-circuit voltages of 1.2 volts and power conversion efficiency of over 17% on small areas and 14.7% on 0.715 cm(2) cells. By combining these perovskite cells with a 19%-efficient silicon cell, we demonstrated the feasibility of achieving >25%-efficient four-terminal tandem cells.

Abstract:

A general strategy for the in-plane structuring of organic-inorganic perovskite films is presented. The method is used to fabricate an industrially relevant distributed feedback (DFB) cavity, which is a critical step towards all-electrially pumped injection laser diodes. This approach opens the prospects of perovskite materials for much improved optical control in LEDs, solar cells and also toward applications as optical devices.

Abstract:

We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al0.4Ga0.6As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.

Abstract:

In this work, we investigate the vibrational properties of the hybrid organic/inorganic halide perovskite MAPbI3 (MA = CH3NH3) in the range 6-3500 cm-1 by combining first-principles density-functional perturbation theory calculations and low-temperature infrared (IR) absorption measurements on evaporated perovskite films. By using a group factor analysis, we establish the symmetry of the normal modes of vibration and predict their IR and Raman activity. We validate our analysis via explicit calculation of the IR intensities. Our calculated spectrum is in good agreement with our measurements. By comparing theory and experiment, we are able to assign most of the features in the IR spectrum. Our analysis shows that the IR spectrum of MAPbI3 can be partitioned into three distinct regions: the internal vibrations of the MA cations (800-3100 cm-1), the cation librations (140-180 cm-1), and the internal vibrations of the PbI3 network (<100 cm-1). The low-frequency region of the IR spectrum is dominated by Pb-I stretching modes of the PbI3 network with Bu symmetry and librational modes of the MA cations. In addition, we find that the largest contributions to the static dielectric constant arise from Pb-I stretching and Pb-I-Pb rocking modes, and that one low-frequency B2u Pb-I stretching mode exhibits a large LO-TO splitting of 50 cm-1.

Abstract:

The photoluminescence, transmittance, charge-carrier recombination dynamics, mobility, and diffusion length of CH3NH3PbI3 are investigated in the temperature range from 8 to 370 K. Profound changes in the optoelectronic properties of this prototypical photovoltaic material are observed across the two structural phase transitions occurring at 160 and 310 K. Drude-like terahertz photoconductivity spectra at all temperatures above 80 K suggest that charge localization effects are absent in this range. The monomolecular charge-carrier recombination rate generally increases with rising temperature, indicating a mechanism dominated by ionized impurity mediated recombination. Deduced activation energies Ea associated with ionization are found to increase markedly from the room-temperature tetragonal (Ea ≈ 20 meV) to the higher-temperature cubic (Ea ≈ 200 meV) phase adopted above 310 K. Conversely, the bimolecular rate constant decreases with rising temperature as charge-carrier mobility declines, while the Auger rate constant is highly phase specific, suggesting a strong dependence on electronic band structure. The charge-carrier diffusion length gradually decreases with rising temperature from about 3 μm at -93 °C to 1.2 μm at 67 °C but remains well above the optical absorption depth in the visible spectrum. These results demonstrate that there are no fundamental obstacles to the operation of cells based on CH3NH3PbI3 under typical field conditions. The photoconductivity in CH3NH3PbI3 thin films is investigated from 8 to 370 K across three structural phases. Analysis of the charge-carrier recombination dynamics reveals a variety of starkly differing recombination mechanisms. Evidence of charge-carrier localization is observed only at low temperature. High charge mobility and diffusion length are maintained at high temperature beyond the tetragonal-to-cubic phase transition at ≈310 K.