Prof Michael Johnston: Publications

Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (2000) 554-555

Authors:

A Corchia, R McLaughlin, CM Ciesla, MB Johnston, DD Arnone, EH Linfield, AG Davies, MY Simmons, M Pepper

Abstract:

The effects of magnetic fields up to 8T on the THz emission from a bulk (100) n-type molecular beam epitaxy (MBE)-grown GaAs sample were studied. Magnetic field was applied in the plane of incidence parallel to the reflected THz beam. The emitted THz radiation was measured both by an incoherent bolometer detection scheme and coherent free-space electro-optic (EOS) sampling. Overall, significant data was obtained.

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Carrier capture and relaxation in Stranski-Krastanow In_xGa_1-xAs/GaAs(311)B quantum dots

PHYSICAL REVIEW B 62:4 (2000) 2737-2742

Authors:

C Lobo, N Perret, D Morris, J Zou, DJH Cockayne, MB Johnston, M Gal, R Leon

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Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing

JOURNAL OF INFRARED AND MILLIMETER WAVES 19:1 (2000) 25-28

Authors:

N Li, W Lu, N Li, XQ Liu, XZ Yuan, HF Dou, XC Shen, L Fu, HH Tan, C Jagadish, MB Johnston, M Gal

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Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

JOURNAL OF APPLIED PHYSICS 87:3 (2000) 1566-1568

Authors:

XQ Liu, W Lu, XS Chen, SC Shen, HH Tan, S Yuan, C Jagadish, MB Johnston, LV Dao, M Gal, J Zou, DJH Cockayne

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A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

Institute of Electrical and Electronics Engineers (IEEE) (1999) 348-351

Authors:

MB Johnston, LV Dao, M Gal, NE Lumpkin, RG Clark, F Lan, HH Tan, C Jagadish, Na Li, Zhanghai Chen, Xingquan Liu, Ning Li, Wei Lu, SC Shen

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Prof Michael Johnston

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Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Authors:

Abstract:

Carrier capture and relaxation in Stranski-Krastanow In_xGa_1-xAs/GaAs(311)B quantum dots

Authors:

Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing

Authors:

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Authors:

A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

Authors:

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Prof Michael Johnston

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Enhanced coherent THz emission from (100) GaAs in the presence of a magnetic field

Authors:

Abstract:

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots

Authors:

Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing

Authors:

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Authors:

A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

Authors:

Carrier capture and relaxation in Stranski-Krastanow In_xGa_1-xAs/GaAs(311)B quantum dots