Enhancement of THz emission from semiconductor devices
COMMAD 2002 PROCEEDINGS (2002) 281-284
Enhancement of terahertz emission from semiconductor surfaces
THZ 2002: IEEE TENTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS (2002) 48-51
Thermally stimulated luminescence in ion-implanted GaAs
JOURNAL OF LUMINESCENCE 96:2-4 (2002) PII S0022-2313(01)00219-8
Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide
Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045
Abstract:
The excitation density dependence of magnetic-field-enhanced terahertz (THz = 1012 Hz) emission from (100) GaAs is studied. It is found that THz power saturates at a higher optical-excitation density, when a magnetic field is applied. This observation explains the different magnetic field enhancements that have been reported recently. At low excitation densities the results are shown to be consistent with a simple model of carrier-carrier scattering, whilst at higher densities surface field screening becomes important.Effects of magnetic field and optical fluence on terahertz emission in gallium arsenide
Physical Review B - Condensed Matter and Materials Physics 64:20 (2001) 2052041-2052045