Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells
Proceedings of SPIE--the International Society for Optical Engineering SPIE, the international society for optics and photonics 3413 (1998) 140-145
Interdiffusion in GaAs-AlGaAs quantum wells using anodic and thermal oxides of GaAs
Institute of Electrical and Electronics Engineers (IEEE) 2 (1998) 36-37 vol.2
Improved carrier collection in intermixed InGaAs/GaAs quantum wells
APPLIED PHYSICS LETTERS 73:23 (1998) 3408-3410
Si and C δ-doping for device applications
JOURNAL OF CRYSTAL GROWTH 195:1-4 (1998) 54-57
Si and C δ-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 51:1-3 (1998) 103-105