Dr Pascal Kaienburg

Abstract:

A correct determination of voltage losses is crucial for the development of organic solar cells (OSCs) with improved performance. This requires an in-depth understanding of the properties of interfacial charge transfer (CT) states, which not only set the upper limit for the open-circuit voltage of a system, but also govern radiative and non-radiative recombination processes. Over the last decade, different approaches have emerged to classify voltage losses in OSCs that rely on a generic detailed balance approach or additionally include CT state parameters that are specific to OSCs. In the latter case, a correct determination of CT state properties is paramount. In this work, we summarize the different frameworks used today to calculate voltage losses and provide an in-depth discussion of the currently most important models used to characterize CT state properties from absorption and emission data of organic thin films and solar cells. We also address practical concerns during the data recording, analysis, and fitting process. Departing from the classical two-state Marcus theory approach, we discuss the importance of quantized molecular vibrations and energetic hybridization effects in organic donor-acceptor systems with the goal to providing the reader with a detailed understanding of when each model is most appropriate.

Abstract:

Vacuum-thermal evaporation (VTE) is a highly relevant fabrication route for organic solar cells (OSCs), especially on an industrial scale as proven by the commercialization of organic light emitting diode-based displays. While OSC performance is reported for a range of VTE-deposited molecules, a comprehensive assessment of donor:acceptor blend properties with respect to their photovoltaic performance is scarce. Here, the organic thin films and solar cells of three select systems are fabricated and ellipsometry, external quantum efficiency with high dynamic range, as well as OTRACE are measured to quantify absorption, voltage losses, and charge carrier mobility. These parameters are key to explain OSC performance and will help to rationalize the performance of other material systems reported in literature as the authors’ methodology is applicable beyond VTE systems. Furthermore, it can help to judge the prospects of new molecules in general. The authors find large differences in the measured values and find that today's VTE OSCs can reach high extinction coefficients, but only moderate mobility and voltage loss compared to their solution-processed counterparts. What needs to be improved for VTE OSCs is outlined to again catch up with their solution-processed counterparts in terms of power conversion efficiency.

Abstract:

We use the electron spin as a probe to gain insight into the mechanism of molecular doping in a p-doped zinc phthalocyanine host across a broad range of temperatures (80–280 K) and doping concentrations (0–5 wt% of F6-TCNNQ). Electron paramagnetic resonance (EPR) spectroscopy discloses the presence of two main paramagnetic species distinguished by two different g-tensors, which are assigned based on density functional theory calculations to the formation of a positive polaron on the host and a radical anion on the dopant. Close inspection of the EPR spectra shows that radical anions on the dopants couple in an antiferromagnetic manner at device-relevant doping concentrations, thereby suggesting the presence of dopant clustering, and that positive polarons on the molecular host move by polaron hopping with an activation energy of 5 meV. This activation energy is substantially smaller than that inferred from electrical conductivity measurements (∼233 meV), as the latter also includes a (major) contribution from charge-transfer state dissociation. It emerges from this study that probing the electron spin can provide rich information on the nature and dynamics of charge carriers generated upon doping molecular semiconductors, which could serve as a basis for the design of the next generation of dopant and host materials.

Abstract:

The real-time morphological evolution of vacuum-deposited α-sexithiophene (α-6T) on a weakly interacting (glass) substrate at ambient temperature is reported. In situ grazing-incidence small-angle X-ray scattering (GISAXS) enabled the observation of nanoscale aggregates, while in situ grazing-incidence wide-angle scattering (GIWAXS) allowed the study of the molecular-scale morphology. The in situ GISAXS measurements revealed that the α-6T growth proceeds via a Stranski-Krastanov mode, whereby 2-4 complete monolayers are deposited, followed by subsequent layers formed via island growth. In situ GIWAXS also showed the evolution of the polymorph composition during the thin-film growth. Initially, the disordered β-phase and the low-temperature (LT)-phase are deposited in nearly equal proportion until a thickness of 8 nm, whereby the LT-phase begins to dominate until a final α-6T thickness of 50 nm where the scattering intensity of the LT-phase is more than double that of the β-phase. The change in the polymorph composition coincided with an increase in the LT-phase d-spacing, indicating a lattice strain relief as the thin film moves from surface to bulk-mediated growth. The GISAXS findings were confirmed through direct imaging using ex situ atomic force microscopy (AFM) at various thicknesses, revealing the existence of both initial the initial and intermediate monolayers and final island morphologies. The findings reveal the real-time morphological evolution of α-6T across both the molecular scale and the nanoscale and highlight the role of strain in polymorph growth. Due to the importance of the thin-film microstructure in device performance, it is expected that these results will aid in the development of structure-property relationships necessary to realize the full potential of organic electronics.

Abstract:

The interplay of light absorption, charge-carrier transport, and charge-carrier recombination determines the performance of a photovoltaic absorber material. Here we analyze the influence on the solar-cell efficiency of the absorber material properties absorption coefficient α, charge-carrier mobility μ, and charge-carrier lifetime τ, for different scenarios. We combine analytical calculations with numerical drift-diffusion simulations to understand the relative importance of these three quantities. Whenever charge collection is a limiting factor, the αμτ product is a good figure of merit (FOM) to predict solar-cell efficiency, while for sufficiently high mobilities, the relevant FOM is reduced to the ατ product. We find no fundamental difference between simulations based on monomolecular or bimolecular recombination, but strong surface-recombination affects the maximum efficiency in the high-mobility limit. In the limiting case of high μ and high surface-recombination velocity S, the α/S ratio is the relevant FOM. Subsequently, we apply our findings to organic solar cells which tend to suffer from inefficient charge-carrier collection and whose absorptivity is influenced by interference effects. We estimate that a modest increase in absorption strength by a factor of 1.5 leads to a relative efficiency increase of more than 10% for state-of-the-art organic solar cells.