In situ observations of the growth mode of vacuum-deposited α-sexithiophene
Abstract:
The real-time morphological evolution of vacuum-deposited α-sexithiophene (α-6T) on a weakly interacting (glass) substrate at ambient temperature is reported. In situ grazing-incidence small-angle X-ray scattering (GISAXS) enabled the observation of nanoscale aggregates, while in situ grazing-incidence wide-angle scattering (GIWAXS) allowed the study of the molecular-scale morphology. The in situ GISAXS measurements revealed that the α-6T growth proceeds via a Stranski-Krastanov mode, whereby 2-4 complete monolayers are deposited, followed by subsequent layers formed via island growth. In situ GIWAXS also showed the evolution of the polymorph composition during the thin-film growth. Initially, the disordered β-phase and the low-temperature (LT)-phase are deposited in nearly equal proportion until a thickness of 8 nm, whereby the LT-phase begins to dominate until a final α-6T thickness of 50 nm where the scattering intensity of the LT-phase is more than double that of the β-phase. The change in the polymorph composition coincided with an increase in the LT-phase d-spacing, indicating a lattice strain relief as the thin film moves from surface to bulk-mediated growth. The GISAXS findings were confirmed through direct imaging using ex situ atomic force microscopy (AFM) at various thicknesses, revealing the existence of both initial the initial and intermediate monolayers and final island morphologies. The findings reveal the real-time morphological evolution of α-6T across both the molecular scale and the nanoscale and highlight the role of strain in polymorph growth. Due to the importance of the thin-film microstructure in device performance, it is expected that these results will aid in the development of structure-property relationships necessary to realize the full potential of organic electronics.How solar cell efficiency is governed by the alpha mu tau product
Abstract:
The interplay of light absorption, charge-carrier transport, and charge-carrier recombination determines the performance of a photovoltaic absorber material. Here we analyze the influence on the solar-cell efficiency of the absorber material properties absorption coefficient α, charge-carrier mobility μ, and charge-carrier lifetime τ, for different scenarios. We combine analytical calculations with numerical drift-diffusion simulations to understand the relative importance of these three quantities. Whenever charge collection is a limiting factor, the αμτ product is a good figure of merit (FOM) to predict solar-cell efficiency, while for sufficiently high mobilities, the relevant FOM is reduced to the ατ product. We find no fundamental difference between simulations based on monomolecular or bimolecular recombination, but strong surface-recombination affects the maximum efficiency in the high-mobility limit. In the limiting case of high μ and high surface-recombination velocity S, the α/S ratio is the relevant FOM. Subsequently, we apply our findings to organic solar cells which tend to suffer from inefficient charge-carrier collection and whose absorptivity is influenced by interference effects. We estimate that a modest increase in absorption strength by a factor of 1.5 leads to a relative efficiency increase of more than 10% for state-of-the-art organic solar cells.