Delayed electron–hole recombination in a pseudo-direct semiconductor
Nature (2026) 1-7
Abstract:
Kirchhoff demonstrated the reciprocity between absorptivity and emissivity for blackbody radiation in 1860 (ref. 1), thereby establishing the general principle that a good absorber must also be a good emitter. This principle underpins the generalized Planck’s law2 and, when applied to semiconductors—in the form of the van Roosbroeck–Shockley equation3—results in substantial limitations to solar energy conversion. Here we demonstrate how this reciprocity can be circumvented in semiconductors, such as bismuth sulfide, showing a pseudo-direct bandgap character—that is, featuring a lower-energy indirect transition paired with a direct transition placed a few kBT above. After determining the pseudo-direct bandgap nature of bismuth sulfide, we reveal how this feature substantially retards bimolecular electron–hole recombination in this material with respect to classic direct semiconductors4. The resulting combination of a high absorption coefficient and delayed recombination offers the unprecedented possibility of overcoming limitations associated with Planck’s law, with far-reaching potential for solar energy conversion.Thermodynamic Control of Excitation Transport Regimes in Nanocrystal Solids
ACS Energy Letters American Chemical Society (ACS) (2026)
Abstract:
Degradation dynamics of lead-halide perovskites under combined heat and light.
Energy & Environmental Science Royal Society of Chemistry (RSC) (2026)
Abstract:
Reliable predictions of long-term stability are essential as halide perovskite solar cells approach widespread commercial deployment. However, extrapolation from aging tests requires knowledge of material degradation dynamics, which remain unclear for halide perovskites. Here, we reveal the structural and optoelectronic evolution of formamidinium-caesium lead-halide perovskite films under heat and/or light using in situ X-ray diffraction and photoluminescence. Heat and light combined induce much faster degradation than either stressor alone, with 1 sun illumination degrading material 53 times faster at 85 °C than room temperature. For all compositions investigated the degradation rate is highly nonlinear in time and follows a sigmoidal decay, suggestive of interface-driven dynamics. Degradation proceeds in three steps: halide segregation (for mixed-halide perovskites), A-site cation diffusion triggered by heterogeneity and strain, and finally iodine and formamidinium loss. Our findings provide a quantitative framework for lifetime predictions and highlight the necessity of combined heat and light ageing tests.Overcoming Charge-Carrier Localization in Metal Chalcohalides
Journal of the American Chemical Society American Chemical Society (ACS) (2026)
Abstract:
Effective charge-carrier transport is a key requirement of next-generation thin-film materials developed for solar cells. Perovskite-inspired materials (PIMs), including metal chalcohalides, show great promise as lead-free solar absorbers. However, intrinsic charge-carrier localization processes have frequently been reported to severely limit their transport properties. Recent research has thus focused on developing a rational understanding of this localization process and identifying strategies to eliminate it. Mixed-metal chalcohalides (A2BCh2X3) may offer promising solutions, combining enhanced chemical stability with promising optoelectronic properties. Here, we demonstrate how charge-carrier localization can be overcome through judicious chemical substitution in this family of materials. Upon changing the M(II) cation on the A-site, the lattice symmetry shifts from the lower-symmetry monoclinic P21/c phase in Pb2SbS2I3 to the higher-symmetry orthorhombic Cmcm phase in Sn2SbS2I3. Crucially, a rapid localization of charge carriers within the first few picoseconds of their generation is observed only for Pb2SbS2I3, whereas Sn2SbS2I3 maintains a longer-lived nanosecond photoconductivity. We attribute this observation to the higher electronic dimensionality of the Cmcm Sn2SbS2I3 structure, whose more symmetric lattice suppresses the charge-carrier localization dominating in the lower-dimensional P21/c Pb-analogue. These findings establish a direct link between structural and optoelectronic properties in metal chalcohalides, demonstrating how facile chemical tuning can be harnessed to overcome charge-carrier localization in PIM absorbers for solar energy harvesting.Tracking the Breakdown of Quantum Confinement during Structural Degradation of FAPbI 3
The Journal of Physical Chemistry Letters American Chemical Society 17:23 (2026) 6566-6573