Breaking the Entangling Gate Speed Limit for Trapped-Ion Qubits Using a Phase-Stable Standing Wave.
Physical review letters American Physical Society (APS) 131:22 (2023) 220601
Abstract:
All laser-driven entangling operations for trapped-ion qubits have hitherto been performed without control of the optical phase of the light field, which precludes independent tuning of the carrier and motional coupling. By placing ^{88}Sr^{+} ions in a λ=674 nm standing wave, whose relative position is controlled to ≈λ/100, we suppress the carrier coupling by a factor of 18, while coherently enhancing the spin-motion coupling. We experimentally demonstrate that the off-resonant carrier coupling imposes a speed limit for conventional traveling-wave Mølmer-Sørensen gates; we use the standing wave to surpass this limit and achieve a gate duration of 15 μs, restricted by the available laser power.Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic
Quantum Science and Technology IOP Publishing 9:1 (2023) 015007
Abstract:
We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single 43Ca+ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.Fast, High-Fidelity Addressed Single-Qubit Gates Using Efficient Composite Pulse Sequences.
Physical review letters 131:12 (2023) 120601
Abstract:
We use electronic microwave control methods to implement addressed single-qubit gates with high speed and fidelity, for ^{43}Ca^{+} hyperfine "atomic clock" qubits in a cryogenic (100 K) surface trap. For a single qubit, we benchmark an error of 1.5×10^{-6} per Clifford gate (implemented using 600 ns π/2 pulses). For 2 qubits in the same trap zone (ion separation 5 μm), we use a spatial microwave field gradient, combined with an efficient four-pulse scheme, to implement independent addressed gates. Parallel randomized benchmarking on both qubits yields an average error 3.4×10^{-5} per addressed π/2 gate. The scheme scales theoretically to larger numbers of qubits in a single register.Entanglement-Enhanced Frequency Comparison of Two Optical Atomic Clocks
Institute of Electrical and Electronics Engineers (IEEE) 00 (2023) 1-1
Surface-electrode ion trap design for near-field microwave quantum gates
Applied Physics B Springer Nature 129:6 (2023) 89