Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene
PHYSICAL REVIEW B 87:4 (2013) ARTN 045414
Lattice-matched InGaAs on InP thermophovoltaic cells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28:1 (2013) ARTN 015013
Novel single-walled carbon nanotube: Dual polymer nanostructures
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 245 (2013)
Weak localization scattering lengths in epitaxial, and CVD graphene
Physical Review B - Condensed Matter and Materials Physics 86:23 (2012)
Abstract:
Weak localization in graphene is studied as a function of carrier density in the range from 1×1011 cm-2 to 1.43×1013 cm -2 using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths Lφ, Li, and L* on carrier density. We find no significant carrier dependence for L φ, a weak decrease for Li with increasing carrier density just beyond a large standard error, and a n-1/4 dependence for L*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. © 2012 American Physical Society.Environment induced variation in the photoconductivity of graphene observed by terahertz spectroscopy
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz (2012)